Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yukifumi Yoshida"'
Publikováno v:
Solid State Phenomena. 314:222-227
Wet cleaning has become challenging as the feature size of semiconductor devices decreased to sub-5 nm nodes. One of the key challenges is removing various types and sizes of particles and contamination from complex and fragile 3D structures without
Autor:
Kana Komori, Yukifumi Yoshida, Yi Chia Lee, Ryo Sekiguchi, Farid Sebaai, Kurt Wostyn, Wen Dar Liu, Frank Holsteyns
Publikováno v:
Solid State Phenomena. 282:101-106
A selective wet etching process for fabricating SiGe and Ge nanowires for gate all around transistors is introduced in this paper. Two formulated proprietary chemical mixtures with highly selective etching properties (Si vs. SiGe and SiGe vs. Ge) can
Autor:
Ryo Sekiguchi, Andriy Hikavyy, Frank Holsteyns, Kurt Wostyn, Wen Dar Liu, Kana Komori, Farid Sebaai, Naoto Horiguchi, Yukifumi Yoshida, Hans Mertens, Jens Rip, Yi Chia Lee
Publikováno v:
Solid State Phenomena. 282:107-112
Gate All-Around (GAA) is considered a key design feature for future CMOS technology. SiGe vs. Si selective etch is required for Si nanowire formation in GAA. It is confirmed the selective SiGe removal with commodity chemical (mixtures of hydrofluoric
Autor:
Toru Masaoka, Yuichi Ogawa, Gan Nobuko, Frank Holsteyns, Antoine Pacco, Yukifumi Yoshida, Yu Fujimura, Kurt Wostyn
Publikováno v:
Solid State Phenomena. 255:27-30
Ultrapure water contains dilute hydrogen peroxide as an impurity. In order to clarify an impact of the dilute hydrogen peroxide on cleaning processes, a SiGe epitaxial layer was deposited on a Si(100) wafer which surface was treated by HF last proces
Publikováno v:
Solid State Phenomena. 255:22-26
The impact of rinsing liquid for Germanium surface after wet chemical treatment is described. The different Ge loss after processing with different rinse (UPW and CO2 water) were determined and the different surface morphologies on the Ge surface aft
Autor:
Yukifumi Yoshida, Hajime Shirakawa, Otsuji Masayuki, Farid Sebaai, Kurt Wostyn, Frank Holsteyns, Masanobu Sato, Hiroaki Takahashi
Publikováno v:
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).
The CMOS devices with Ge, considered as one of new materials for the later 5-nm generations, has been investigated since Ge should be mandatory material to enhance the electron mobility as replacement for Si. In this paper, we will propose new two te
Autor:
Hiroaki Takahashi, Otsuji Masayuki, Frank Holsteyns, Masanobu Sato, Yukifumi Yoshida, Jim Snow, Paul Mertens, Farid Sebaai, Hirofumi Uchida, Hajime Shirakawa
Publikováno v:
Solid State Phenomena. 219:85-88
of these new materials have necessitated the evaluation of new chemicals and processing methods. The control of the Dissolved Oxygen (DO) concentration to suppress Cu corrosion is well established in BEOL processing and likewise in order to achieve a
Autor:
Yukifumi Yoshida, Yu Nakajima, Rumana Tasmin, Yuji Ohshima, Yasuhiro Yamasaki, Mayumi Kawaguchi, Tadashi Matsubara, Xuchun Qiu, Yoshio Kawamura, Tsuneo Honjo, Yohei Shimasaki, Masato Honda, Katsutoshi Kuno, Kentaro Mouri
Publikováno v:
Journal of the Faculty of Agriculture, Kyushu University. 59:373-382
Autor:
Yukifumi Yoshida, Kana Komori, Farid Sebaai, Shota Iwahata, Frank Holsteyns, Dennis H. van Dorp, Kurt Wostyn
Publikováno v:
ECS Meeting Abstracts. :1093-1093
The Gate-All-Around (GAA) architecture constructed of vertically stacked horizontal Silicon Nano-Wires (Si NWs) are a promising candidate to replace FinFET for device scaling at sub 5-nm technology nodes. In this paper, Si NWs’ release, which is th
Autor:
Tsuyoshi Fukao, Yukifumi Yoshida, Toshifumi Yamatogi, Ken-ichi Yamamoto, Katsunori Kimoto, Yuichi Kotani
Publikováno v:
Fisheries Science. 75:1007-1014
Concomitant with the bloom of a diatom, Coscinodiscus sp., there was a sudden production of mucilage in the central area of Ariake Sound during the autumn of 2007. To obtain basic information about this marine mucilage and identify the causative orga