Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yuki Koishikawa"'
Autor:
Shigenobu Yamakoshi, Kohei Sasaki, Daiki Wakimoto, Yuki Koishikawa, Masataka Higashiwaki, Akito Kuramata, Quang Tu Thieu
Publikováno v:
IEEE Electron Device Letters. 38:783-785
We developed $\beta $ -Ga2O3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first time. A Si-doped Ga2O3 layer was grown via halide vapor phase epitaxy on a single-crystal Sn-doped $\beta $ -Ga2O3 (001) substrate. The trench structure was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16abbde289c4ceb267be91ce82f7c47b
https://doi.org/10.1109/led.2017.2696986
https://doi.org/10.1109/led.2017.2696986
Autor:
Shigenobu Yamakoshi, Jun Hirabayashi, Daiki Wakimoto, Yuki Koishikawa, Yoshiaki Fukumitsu, Inokuchi Daisuke, Akio Takatsuka, Quang Tu Thieu, Jun Arima, Akito Kuramata, Kohei Sasaki
Publikováno v:
DRC
Gallium oxide (Ga 2 O 3 ) is promising next-generation semiconductor material for high power and low loss devices. Its wide band gap of 4.5-4.9 eV results in a high breakdown field of $\sim 8\ \mathrm{MV}/\mathrm{cm}$ and Baliga's FOM of $\sim 3400$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e48a04ea65dab9c04dae6b38dfa9de52
https://doi.org/10.1109/drc.2018.8442267
https://doi.org/10.1109/drc.2018.8442267
Autor:
Akito Kuramata, Masataka Higashiwaki, S. Yamakoshi, Yuki Koishikawa, Quang Tu Thieu, Daiki Wakimoto, Kohei Sasaki
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
β-Ga 2 O 3 is a suitable material for next-generation high-power devices because it has excellent material properties and mass productivity. In the past, we have demonstrated field-plated Ga 2 O 3 Schottky barrier diodes (SBDs) with nearly ideal rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::185882bcb874ec56d5353888ca95a182
https://doi.org/10.1109/drc.2017.7999399
https://doi.org/10.1109/drc.2017.7999399
Autor:
Kohei Sasaki, Yuki Koishikawa, Shigenobu Yamakoshi, Akito Kuramata, Daiki Wakimoto, Quang Tu Thieu
Publikováno v:
Applied Physics Express. 10:124201
We developed depletion-mode vertical Ga2O3 trench metal–oxide–semiconductor field-effect transistors by using n+ contact and n− drift layers. These epilayers were grown on an n+ (001) Ga2O3 single-crystal substrate by halide vapor phase epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfad7c78e8adab9a0b710e57a92e69c2
https://doi.org/10.7567/apex.10.124201
https://doi.org/10.7567/apex.10.124201
Autor:
Ken Goto, Daiki Wakimoto, Akito Kuramata, Yoshinao Kumagai, Shigenobu Yamakoshi, Keita Konishi, Hisashi Murakami, Yuki Koishikawa, Quang Tu Thieu, Kohei Sasaki
Publikováno v:
Japanese Journal of Applied Physics. 56:110310
The homoepitaxial growth of thick β-Ga2O3 layers on 2-in.-diameter (001) wafers was demonstrated by halide vapor phase epitaxy. Growth rates of 3 to 4 µm/h were confirmed for growing intentionally Si-doped n-type layers. A homoepitaxial layer with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc94e3b2bf06bf8bedbe56a60feb7e6b
https://doi.org/10.7567/jjap.56.110310
https://doi.org/10.7567/jjap.56.110310
Autor:
Kohei Sasaki, Quang Tu Thieu, Daiki Wakimoto, Yuki Koishikawa, Akito Kuramata, Shigenobu Yamakoshi
Publikováno v:
Applied Physics Express; Dec2018, Vol. 10 Issue 12, p1-1, 1p
Autor:
Kohei Sasaki, Quang Tu Thieu, Daiki Wakimoto, Yuki Koishikawa, Akito Kuramata, Shigenobu Yamakoshi
Publikováno v:
Applied Physics Express; Dec2018, Vol. 10 Issue 12, p1-1, 1p
Autor:
Quang Tu Thieu, Daiki Wakimoto, Yuki Koishikawa, Kohei Sasaki, Ken Goto, Keita Konishi, Hisashi Murakami, Akito Kuramata, Yoshinao Kumagai, Shigenobu Yamakoshi
Publikováno v:
Japanese Journal of Applied Physics; Nov2017, Vol. 56 Issue 11, p1-1, 1p