Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yuki Tsuruma"'
Autor:
Yuki Tsuruma, Emi Kawashima, Yoshikazu Nagasaki, Takashi Sekiya, Gaku Imamura, Genki Yoshikawa
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (I
Externí odkaz:
https://doaj.org/article/a8f182da53ed4910aae02a6a8505af98
Publikováno v:
SID Symposium Digest of Technical Papers. 53:16-19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90d6dcdfe0e5131daf93b5f227c5033f
https://doi.org/10.1002/sdtp.15404
https://doi.org/10.1002/sdtp.15404
Publikováno v:
Small methods. 6(9)
Highly ordered polycrystalline indium gallium oxide (PC-IGO) film is obtained by the crystallization of room temperature sputtered amorphous IGO on a hot plate at 350 °C for 1 h and then annealed for 1 h in an N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::65b02d4edde1e375fd70578f59fcf1d2
https://pubmed.ncbi.nlm.nih.gov/35879024
https://pubmed.ncbi.nlm.nih.gov/35879024
Autor:
Rostislav Velichko, Mamoru Furuta, Daiki Tanaka, Yuki Tsuruma, Toshihiro Matsumura, Daichi Sasaki, Taiki Kataoka, Yusaku Magari, Emi Kawashima, Kenta Shimpo
Publikováno v:
SID Symposium Digest of Technical Papers. 52:69-72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca60bdd2d24118b3e1f7e3391c1664e
https://doi.org/10.1002/sdtp.14612
https://doi.org/10.1002/sdtp.14612
Autor:
Yasunori Fujikawa, Abdullah Al-Mahboob, Koichiro Saiki, Yuki Tsuruma, Susumu Ikeda, Jerzy T. Sadowski, Genki Yoshikawa, Toshio Sakurai
Publikováno v:
Advanced Materials. 21:4996-5000
Rapid developments in semiconductor technology are based on the fabrication of thin layers and/or their multilayered films of semiconductor crystals. The artificially grown layers can be formed utilizing sophisticated film-growth techniques, in which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34ed96f6de0d3753f10dba7d0b4af8af
https://doi.org/10.1002/adma.200901436
https://doi.org/10.1002/adma.200901436
Publikováno v:
Langmuir. 24:11605-11610
A poly(3-dodecylthiophene-2,5-diyl) film having in-plane anisotropic molecular arrangement was successfully fabricated by transferring its Langmuir-Blodgett film onto a step-bunched Si(111) substrate. Polarized near-edge X-ray absorption fine structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47202e72231b37d6306c204d37f03431
https://doi.org/10.1021/la8016722
https://doi.org/10.1021/la8016722
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 22(1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ad77778bcec16d74c17d42fcc8a428e
https://pubmed.ncbi.nlm.nih.gov/20217694
https://pubmed.ncbi.nlm.nih.gov/20217694
Publikováno v:
Applied Physics Express. 5:011102
Oxide thin-film transistors (TFTs) were fabricated using a polycrystalline In–Ga–O (IGO) thin film as the n-channel active layer by direct current magnetron sputtering. The 50-nm-thick IGO TFT showed a field-effect mobility of 39.1 cm2 V-1 s-1, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cc56c5934e20825c0119bf14e252b9b
https://doi.org/10.1143/apex.5.011102
https://doi.org/10.1143/apex.5.011102
Autor:
Susumu Ikeda, Jerzy T. Sadowski, Genki Yoshikawa, Koichiro Saiki, Yuki Tsuruma, Abdullah Al-Mahboob, Toshio Sakurai, Yasunori Fujikawa
Publikováno v:
Applied Physics Letters. 90:251906
The authors have found that pentacene molecules deposited on SiO2 substrates treated with self-assembled monolayers, such as hexamethyldisilazane or octadecyltrichlorosilane, aggregate spontaneously. In situ, real-time low-energy electron microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3c74e04a76df80f3f7f2a870ed9d7a
https://doi.org/10.1063/1.2749721
https://doi.org/10.1063/1.2749721
Publikováno v:
Langmuir; Sep2008, Vol. 24 Issue 20, p11605-11610, 6p