Zobrazeno 1 - 10 of 11 pro vyhledávání: '"Yuji Kakizaki"'
1
Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis
Autor: Seiji Takeuchi, Alberto O. Adan, Lajos Louis Burgyan, Yuji Kakizaki, Yusuke Takagi
Publikováno v: IEEE Power Electronics Magazine. 8:34-43
Silicon carbide (SiC) transistors are known for their high breakdown voltage capabilities and ability to operate at much higher temperatures relative to silicon (Si) power semiconductors. The first commercial SiC MOSFETs were introduced in 2010 [1],
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3d61e08e259c84db13d5725e12739fcb
https://doi.org/10.1109/mpel.2021.3075674
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2
The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective
Autor: Daisuke Tanaka, Lajos Louis Burgyan, Yuji Kakizaki, Alberto O. Adan
Publikováno v: IEEE Power Electronics Magazine. 6:36-47
There is continuous activity to increase the efficiency and reduce the size of power electronic systems and modules developed for transportation and automotive electrification applications [1], [2]. One of the key requirements for achieving these obj
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07267da2c40178f980e9d72733889777
https://doi.org/10.1109/mpel.2019.2909592
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3
Benchmarking power transistors and power modules for high-temperature operation (Tj∼200°C)
Autor: Alberto O. Adan, Lajos Burgyan, Hideki Nakagawa, Yuji Kakizaki
Publikováno v: 2017 IEEE Transportation Electrification Conference and Expo (ITEC).
Structural and construction characteristics of leading edge high-temperature SiC semiconductor devices are analyzed in this paper. Representative power devices having Tj=175°C and Tj=200°C were selected for the study: Two 1200V-SiC-based devices: R
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::239361de6de56b0b04e53b2500ccd75c
https://doi.org/10.1109/itec.2017.7993348
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4
Reverse Engineering for the Purpose of Intellectual Property Protection and Accelerated Product Development in SOC and SIP Structures
Autor: Lajos Louis Burgyan, Yuji Kakizaki
Publikováno v: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:000436-000458
Technical analysis of intellectual property (IP) is conducted for the purpose of legal protection and product development. A brief review of the process of IP analysis and associated terminology is provided along with examples illustrating the signif
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1393e12723b15b90c30b80c0c44f4e4a
https://doi.org/10.4071/2014dpc-ta13
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9
BIOCHEMICAL STUDIES ON SALMONIDAE II
Autor: HIDESABURO SEKINE, MINORU KAWAJIRI, YUJI KAKIZAKI
Publikováno v: Bulletin of the Agricultural Chemical Society of Japan. 5:57-60
1) The influence of the sun-light on the eggs, larvae and fry of Oncorhynchus masou (Brevoort) are studied. 2) The intensity of the sun-light may be effected already upon their chemical compositions in the fry through the oval and larval stages. The
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e25441f61b0590372b32d454ae2074c
https://doi.org/10.1271/bbb1924.5.57
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