Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yuji Egi"'
Autor:
Shunpei Yamazaki, Fumito Isaka, Toshikazu Ohno, Yuji Egi, Sachiaki Tezuka, Motomu Kurata, Hiromi Sawai, Ryosuke Motoyoshi, Etsuko Asano, Satoru Saito, Tatsuya Onuki, Takanori Matsuzaki, Michio Tajima
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-11 (2024)
Abstract Formation of a single crystalline oxide semiconductor on an insulating film as a channel material capable of three-dimensional (3D) stacking would enable 3D very-large-scale integration circuits. This study presents a technique for forming s
Externí odkaz:
https://doaj.org/article/934b7800c3704b62a4be9be871324384
Autor:
Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 467-472 (2023)
Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a ${c}$ -axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown vo
Externí odkaz:
https://doaj.org/article/130a499579cf486f97ff60e88658e798