Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yuji Ebiike"'
Publikováno v:
Materials Science Forum. 858:829-832
High threshold voltage low loss 600 V 4H-SiC MOSFETs have been fabricated successfully using a re-oxidation technique for gate oxides and an n-type doping in the Junction Field Effect Transistor region of the MOSFET with shrunk MOS cells. The MOSFET
Autor:
Eisuke Suekawa, Masayoshi Tarutani, Shigehisa Yamamoto, Masayuki Imaizumi, Yuji Ebiike, Takeshi Murakami, Hiroaki Sumitani
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
3.3 kV 4H-SiC MOSFETs with various buffer layer thickness has been fabricated in order to investigate the bipolar degradation associated with the expansion of stacking faults (SFs). The body diode stress tests under DC current of 240 A/cm2 were perfo
Autor:
Masayuki Imaizumi, Naoki Yutani, Toshikazu Tanioka, Masayuki Furuhashi, S. Yamakawa, Yuji Ebiike, Eisuke Suekawa, Tatsuo Oomori, Yoichiro Tarui, Naruhisa Miura, Shinji Sakai
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
The threshold voltage of 4H-SiC MOSFET increases drastically by performing wet oxidation after nitridation of gate oxide without significant decrease in the channel effective mobility. The increment of the threshold voltage depends on the wet oxidati
Autor:
Tatsuo Oomori, Masayuki Imaizumi, Yukiyasu Nakao, Yasuhiro Kagawa, Yuji Ebiike, Akihiko Furukawa, Hiroshi Nakatake, Shinichi Kinouchi, Narihisa Miura, Hiroaki Sumitani
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
4H-SiC MOSFETs integrated with a current sensor have been fabricated for the first time. The MOSFET shows superior characteristics with a specific on-resistance of 3.7 mΩcm2 and a blocking voltage of 1.4 kV. The deviation of the current ratio (Imain
Autor:
Masayuki Imaizumi, Satoshi Yamakawa, Isao Umezaki, Eisuke Suekawa, Hiroshi Watanabe, Naruhisa Miura, Kenji Hamada, Shuhei Nakata, Yuji Ebiike, Shiro Hino
Publikováno v:
Japanese Journal of Applied Physics. 54:04DP07
We have successfully developed 4H-SiC devices including metal–oxide–semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with a rated voltage of 3.3 kV. The conduction loss of the SiC-MOSFET was reduced to as low as
Autor:
Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa
Publikováno v:
Japanese Journal of Applied Physics; Apr2015, Vol. 54 Issue 4S, p1-1, 1p