Zobrazeno 1 - 10
of 198
pro vyhledávání: '"Yuji Ando"'
Autor:
Yuji Ando, Tomoya Suda
Publikováno v:
European Physical Journal C: Particles and Fields, Vol 84, Iss 6, Pp 1-16 (2024)
Abstract For some classical solutions $$\Psi _\textrm{sol}$$ Ψ sol in Witten’s bosonic string field theory, it was proven that energy of the solution is proportional to the Ellwood invariant $$\textrm{Tr}(\mathcal {V}\Psi _\textrm{sol})$$ Tr ( V
Externí odkaz:
https://doaj.org/article/a18b83715c084865bba216fd27e42456
Publikováno v:
Journal of Chemical Engineering of Japan, Vol 56, Iss 1 (2023)
Biodegradable plastics should be appropriately managed independently of general plastics during and after use. To establish an effective recycling process for biodegradable plastics, the present study investigates and evaluates the applicability of g
Externí odkaz:
https://doaj.org/article/e4bee1b19eb14ccbb2bd345a709d8150
Publikováno v:
Electronics Letters, Vol 59, Iss 10, Pp n/a-n/a (2023)
Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow techni
Externí odkaz:
https://doaj.org/article/acd56a6c3924475d95f28c55cc4575c8
Autor:
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-6 (2022)
Abstract As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In the previous report, from the perspective of GaN substrate proce
Externí odkaz:
https://doaj.org/article/b031cd73f53e4a8495aa2c96e1ea0869
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 297-300 (2022)
This paper investigates bias-dependence of electroluminescence (EL) in an AlGaN/GaN HEMT fabricated on a SiC substrate. The HEMT exhibited a low-intensity reddish EL at the gate electrode at a drain voltage (Vds) of 30 V, which was confirmed with com
Externí odkaz:
https://doaj.org/article/4204a559c40145aa9509b775883f1dc1
Autor:
Hidemasa Takahashi, Yuji Ando, Yoichi Tsuchiya, Akio Wakejima, Hiroaki Hayashi, Eiji Yagyu, Koichi Kikkawa, Naoki Sakai, Kenji Itoh, Jun Suda
Publikováno v:
Electronics Letters, Vol 57, Iss 21, Pp 810-812 (2021)
Abstract Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna. A wide recessed gate GaN GADs were prepared and the r
Externí odkaz:
https://doaj.org/article/aaa4131eb892405598db2ff407ab0a62
Publikováno v:
Electronics Letters, Vol 57, Iss 15, Pp 591-593 (2021)
Abstract This paper investigates the electron trapping behaviour after bias stress in GaN high‐electron‐mobility transistors (HEMTs) fabricated on GaN substrate. On‐resistance (RON) and electron‐trap‐induced threshold voltage shift (ΔVth)
Externí odkaz:
https://doaj.org/article/c68adc0d93094d5a849b41a64529b061
Autor:
Yusuke Takagi, Kazutoshi Seki, Yosuke Ogiso, Takayuki Kobuchi, Taketo Kawagishi, Yuji Ando, Kaori Fukuchi, Shusuke Tsubota, Akari Yoshikawa, Yuki Aikawa, Norihiro Yamada
Publikováno v:
Journal of Physical Fitness and Sports Medicine, Vol 9, Iss 3, Pp 143-148 (2020)
We investigated changes in the basic parameter of physiological stress such as catecholamine and heart rate, blood pressure during the ascent of one-day Mt. Fuji hiking via the Fujinomiya Trail. Six Japanese healthy young adult males (age: 21 ± 1 ye
Externí odkaz:
https://doaj.org/article/124871c7ec484b629afe6f77b173b58e
Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
Publikováno v:
Electronics Letters, Vol 57, Iss 24, Pp 948-949 (2021)
Abstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i‐line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150
Externí odkaz:
https://doaj.org/article/c4089ebe3da344e09f0a4a653c6cd516
Autor:
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-1 (2022)
Externí odkaz:
https://doaj.org/article/27ec01ae60b04125a04d2c756228a71a