Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Yuichiro Tokuda"'
Autor:
Okamoto Takeshi, Nobuyuki Ohya, Norihiro Hoshino, Hideyuki Uehigashi, Takahiro Kanda, Isaho Kamata, Hidekazu Tsuchida, Hironari Kuno, Yuichiro Tokuda
Publikováno v:
Materials Science Forum. 1004:5-13
The process conditions for fast growth of 4 in. 4H-polytype SiC (4H-SiC) single crystals were studied for high-temperature gas source method. Prior to experiments, crystal growth simulations were conducted to investigate the influence of vertical gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1968cfe69c30bc31e76e99ecca38fff9
https://doi.org/10.4028/www.scientific.net/msf.1004.5
https://doi.org/10.4028/www.scientific.net/msf.1004.5
Autor:
Hidekazu Tsuchida, Hiroshi Osawa, Hajime Okumura, Kazuma Eto, Yuichiro Tokuda, Hiromasa Suo, Tomohisa Kato, Takeshi Ise
Publikováno v:
Journal of Crystal Growth. 498:224-229
N-type 4H-SiC crystals were grown by the physical vapor transport (PVT) method with nitrogen and aluminum (N–Al) co-doping. By using aluminum carbide powder preannealed in nitrogen gas atmosphere as an aluminum doping source, we obtained highly N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::649af1cde7e358dfe92f3a0ed14cba5e
https://doi.org/10.1016/j.jcrysgro.2018.06.019
https://doi.org/10.1016/j.jcrysgro.2018.06.019
Autor:
Emi Makino, Hidekazu Tsuchida, Isaho Kamata, Norihiro Hoshino, Takahiro Kanda, Jun Kojima, Naohiro Sugiyama, Hironari Kuno, Yuichiro Tokuda
Publikováno v:
Materials Science Forum. 924:180-183
Synchrotron X-ray topography was carried out for 4H-SiC crystals grown by high-temperature gas source method, and transmission topography analysis with g= or 0004 was carried out for the cross-sectional samples. Dislocation contrasts extended in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee859ab5ac5417fa620e1c81c684659
https://doi.org/10.4028/www.scientific.net/msf.924.180
https://doi.org/10.4028/www.scientific.net/msf.924.180
Autor:
Emi Makino, Yuichiro Tokuda, Norihiro Hoshino, Takahiro Kanda, Naohiro Sugiyama, Hidekazu Tsuchida, Jun Kojima, Hironari Kuno, Isaho Kamata
Publikováno v:
Journal of Crystal Growth. 478:9-16
Fast growth of n-type 4H-SiC crystals was attempted using a high-temperature gas-source method. High growth rates exceeding 9 mm/h were archived at a seed temperature of 2550 °C, although the formation of macro-step bunching caused doping fluctuatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de64f89c8664c0e88cbfcf7ae1e8ffa2
https://doi.org/10.1016/j.jcrysgro.2017.08.004
https://doi.org/10.1016/j.jcrysgro.2017.08.004
Autor:
Isaho Kamata, Yuichiro Tokuda, N. Hoshino, Tomohisa Kato, Hajime Okumura, Tsunenobu Kimoto, Hidekazu Tsuchida
Publikováno v:
Journal of Crystal Growth. 468:889-893
The expansion of double-Shockley stacking faults (DSFs) in 4H-SiC was investigated by a photoluminescence (PL) imaging technique. To observe DSFs nondestructively, heavily-nitrogen-doped epilayers were prepared to be used as specimens and the PL tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1150727c8bd06f58bac130e5ea940c66
https://doi.org/10.1016/j.jcrysgro.2017.01.004
https://doi.org/10.1016/j.jcrysgro.2017.01.004
Autor:
Yuichiro Tokuda, Hidekazu Tsuchida, Hajime Okumura, Hiroshi Osawa, Takeshi Ise, Tomohisa Kato, Kazuma Eto, Hiromasa Suo
Publikováno v:
Journal of Crystal Growth. 468:879-882
The growth of n-type 4H-SiC crystals has been performed by physical vapor transport (PVT) growth method, with nitrogen and boron (N-B) co-doping. It was revealed that, in the growth of 4H-SiC with N-B co-doping, the generation of double Shockley-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e070807f495c5297fb441b78d5cb61
https://doi.org/10.1016/j.jcrysgro.2016.12.055
https://doi.org/10.1016/j.jcrysgro.2016.12.055
Autor:
Norihiro Hoshino, Naohiro Sugiyama, Isaho Kamata, Jun Kojima, Hidekazu Tsuchida, Kazukuni Hara, Emi Makino, Yuichiro Tokuda
Publikováno v:
Journal of Crystal Growth. 448:29-35
We investigate growth conditions to obtain high-quality SiC bulk crystals by the High-Temperature Chemical Vapor Deposition (HTCVD) method. Formation of dendrite crystals, which sometimes occurs on the growth front and degrades the material quality,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc1f0ec61f4595648f0508d0bbaa0f7
https://doi.org/10.1016/j.jcrysgro.2016.03.046
https://doi.org/10.1016/j.jcrysgro.2016.03.046
Autor:
Isaho Kamata, Emi Makino, Naohiro Sugiyama, Yuichiro Tokuda, Norihiro Hoshino, Hidekazu Tsuchida, Jun Kojima
Publikováno v:
Materials Science Forum. 858:23-28
In order to diffuse the use of SiC, mass-production technologies of SiC wafers are needed. It is easy to be understood that high-speed and long-sized growth technologies are connected directly with mass-production technologies. The gas source growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d08e481968576198cb3c8cc9b15c75a3
https://doi.org/10.4028/www.scientific.net/msf.858.23
https://doi.org/10.4028/www.scientific.net/msf.858.23
Autor:
Naohiro Sugiyama, Norihiro Hoshino, Isaho Kamata, Yuichiro Tokuda, Jun Kojima, Hidekazu Tsuchida, Emi Makino
Publikováno v:
Materials Science Forum. 858:29-32
Limitations in the very fast growth of 4H-SiC crystals are surveyed for a high-temperature gas source method. The evolution of macro-step bunching and void formation in crystal growth is investigated by changing the partial pressures of the source ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb3f60117154e0e712c713942902d4a
https://doi.org/10.4028/www.scientific.net/msf.858.29
https://doi.org/10.4028/www.scientific.net/msf.858.29
Autor:
Naohiro Sugiyama, Jun Kojima, Hidekazu Tsuchida, Norihiro Hoshino, Emi Makino, Yuichiro Tokuda, Isaho Kamata
Publikováno v:
Materials Science Forum. 858:61-64
This paper investigates the quality of 4H-SiC crystals grown at a very fast growth rate (> 2.5 mm/h) using a high-temperature gas source method. Differences in nitrogen doping efficiency were clarified in facet and step-flow regions. In case for grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ede2446b728e5b571758a9598fb173
https://doi.org/10.4028/www.scientific.net/msf.858.61
https://doi.org/10.4028/www.scientific.net/msf.858.61