Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Yuichiro Nanen"'
Autor:
Takashi Nakamura, Yuichiro Nanen, Takui Sakaguchi, Seigo Mori, Masatoshi Aketa, Tsunenobu Kimoto, Hirokazu Asahara
Publikováno v:
IEEE Transactions on Electron Devices. 64:4167-4174
Novel 3-kV 4H-SiC reverse blocking (RB) metal–oxide–semiconductor field-effect transistors (MOSFETs) have been demonstrated for high-voltage bidirectional switching applications. To achieve RB capability, a series Schottky barrier diode structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c614e1734ca48a3557a306d6513b2250
https://doi.org/10.1109/ted.2017.2732065
https://doi.org/10.1109/ted.2017.2732065
Publikováno v:
Materials Science Forum. 858:885-888
Dynamic and static characteristics of SiC power MOSFETs at high temperature up to 380°C were investigated. Investigated devices have exhibited a behavior as a normally-off MOSFET even at such high temperature as 380°C. Temperature dependence of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db5e396eed8d4a53aaf6b089d8584b57
https://doi.org/10.4028/www.scientific.net/msf.858.885
https://doi.org/10.4028/www.scientific.net/msf.858.885
Autor:
Takayoshi Shimura, Tsunenobu Kimoto, Heiji Watanabe, Takuji Hosoi, Yoshihito Katsu, Yuichiro Nanen
Publikováno v:
Materials Science Forum. 858:599-602
We evaluated the effect of NO annealing on hole trapping characteristic of SiC metal-oxide-semiconductor (MOS) capacitor by measuring flatband voltage (VFB) shifts during a constant negative gate voltage stress under UV illumination. Under low stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cb050c1fa35edf0aff835c14c54028d
https://doi.org/10.4028/www.scientific.net/msf.858.599
https://doi.org/10.4028/www.scientific.net/msf.858.599
Publikováno v:
2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
SiC devices are expected to operate at much higher temperature than Si devices. However, commercially available SiC devices are limited to the temperature almost same as Si devices. In order to operate SiC devices at high temperature, it is necessary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1d7a6859d5c34348dac904b8101a3b4
https://doi.org/10.1109/imfedk.2017.7998057
https://doi.org/10.1109/imfedk.2017.7998057
Publikováno v:
Materials Science Forum. :943-946
Characteristics of high-voltage lateral silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) with various reduced surface field (RESURF) structures were simulated. Breakdown voltage was enhanced from 5300 V for single-zone RES
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1441b1f5e0ed7b1c1e1ab0a1ed37ee46
https://doi.org/10.4028/www.scientific.net/msf.778-780.943
https://doi.org/10.4028/www.scientific.net/msf.778-780.943
Autor:
Yuichiro Nanen, Tsunenobu Kimoto, Masanobu Yoshikawa, Hirohumi Seki, Tsuneyuki Yamane, Muneharu Kato
Publikováno v:
Applied Spectroscopy. 67:542-545
We report the abnormal behavior of longitudinal optical (LO) phonon in a silicon dioxide (SiO2) film on a 4H-SiC bulk epitaxial substrate using an attenuated total reflection (ATR) technique. The peak frequency of the LO phonon in the ATR spectrum wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00e1508ba86f20365e8ebcef25df8d5c
https://doi.org/10.1366/12-06873
https://doi.org/10.1366/12-06873
Publikováno v:
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
Junction temperature of SiC DMOSFETs at device failure in unclamped inductive switching test has been estimated to be 960 K, and mechanism of the avalanche failure was discussed. The junction temperature was estimated from the extrapolation of temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90877e5061f71c1a4b9207a6d362af99
https://doi.org/10.1109/imfedk.2016.7521700
https://doi.org/10.1109/imfedk.2016.7521700
Publikováno v:
Materials Science Forum. :445-448
Post-oxidation annealing (POA) in Ar at high temperature has been performed during fabrication of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). The gate oxides were formed by thermal oxidation followed by N2O annealing, then an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab270618e00cf2351460f5a2082e165b
https://doi.org/10.4028/www.scientific.net/msf.679-680.445
https://doi.org/10.4028/www.scientific.net/msf.679-680.445
Autor:
Gerhard Pensl, Yuichiro Nanen, Svetlana Beljakowa, Tsunenobu Kimoto, Lia Trapaidze, Bernd Zippelius, Michael Krieger
Publikováno v:
Materials Science Forum. :487-490
The authors investigated the effect of preannealing on N-/Al-coimplanted and over-oxidized Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). The preannealing process causes a decrease of the Hall mobility and the effective mobility, and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0b9aea5eec66ef3523c10f7efdac7c
https://doi.org/10.4028/www.scientific.net/msf.645-648.487
https://doi.org/10.4028/www.scientific.net/msf.645-648.487
Autor:
Michael Krieger, Yuichiro Nanen, Tsunenobu Kimoto, Bernd Zippelius, Valeri Afanas'ev, Anton J. Bauer, Svetlana Beljakowa, Gerhard Pensl
Publikováno v:
Materials Science Forum. :463-468
Two electrical measurement techniques are frequently employed for the characteri- zation of traps at the SiO2/SiC interface: the thermal dielectric relaxation current (TDRC) and the conductance method (CM). When plotting Dit as a function of the ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fd8fc7d64cfba66ace9c24b620a6d15
https://doi.org/10.4028/www.scientific.net/msf.645-648.463
https://doi.org/10.4028/www.scientific.net/msf.645-648.463