Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yuichi Otani"'
Autor:
Johannes Muller, Aleksandra Titova, Hongsik Yoon, Thomas Merbeth, Martin Weisheit, Georg Wolf, Sanjeeb Bharali, Bert Pfefferling, Yuichi Otani, Tetyana Shapoval, Alberto Cagliani, Ferenc Vajda, Pedram Sadeghi, Christiana Villas-Boas Grimm, Frank Krause, Ines Altendorf, Gabriele Congedo, Robert Binder, Joachim Metzger, Alexander Lajn, Markus Langner, Young Seon You, Oliver Kallensee, Vinayak B. Naik, Kazutaka Yamane, Steven Soss
Publikováno v:
2022 IEEE International Memory Workshop (IMW).
Autor:
Yuichi Otani, David D. Djayaprawira, Rie Matsumoto, Shinji Yuasa, K. Tsunekawa, Yoshishige Suzuki, Masaki Mizuguchi, Shingo Nishioka, Akio Fukushima, Masashi Shiraishi, Naoki Watanabe, H. Maehara, Taro Nagahama, Hitoshi Kubota
Publikováno v:
Solid State Communications. 143:574-578
We investigated the annealing temperature dependence of differential tunneling conductance spectra ( d I / d V as a function of V ) in CoFeB/textured MgO(001)/CoFeB magnetic tunnel junctions (MTJs) that exhibit the giant tunneling magnetoresistance (
Autor:
David Gilmer, Paul Kirsch, Ono Junko, Takashi Nakagawa, Yuichi Otani, Hokyung Park, Nobuo Yamaguchi, Raj Jammy
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
Low power and reliable “Fab-friendly” resistance switching memory devices (ReRAM) are achieved by controlling composition and morphology of simple binary transition-metal oxides (MeOx) and metal-nitride electrodes (Ti-N) through physical vapor de
Publikováno v:
ECS Meeting Abstracts. :2102-2102
not Available.