Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Yuichi Ohsawa"'
Publikováno v:
AIP Advances, Vol 14, Iss 2, Pp 025327-025327-4 (2024)
In order to break through limits of conventional MRAMs, MTJs with strain-induced magnetic anisotropy were intensively tested as SOT-MRAM cells. Small critical switching-current of 10–25 μA and switching-voltage of about 0.055 V, and almost no rete
Externí odkaz:
https://doaj.org/article/90b9f676fc074007b590d6b2c47ffae3
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
This paper proposes a brand new non-volatile XNOR logic-gate that works as both a logic-gate and a nonvolatile memory. It can unify a micro-processor and a memory and it is expected that it saves energy consumption associated with data transfer and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e6f0e2e1a764fb7483f426d8331256
https://doi.org/10.1109/imw48823.2020.9108120
https://doi.org/10.1109/imw48823.2020.9108120
Autor:
Atsushi Kurobe, K. Koi, A. Tiwari, Yuzo Kamiguchi, Yoshiaki Saito, Satoshi Shirotori, Mizue Ishikawa, Naoharu Shimomura, Hideyuki Sugiyama, Yushi Kato, Yuichi Ohsawa, Tomoaki Inokuchi, Kazutaka Ikegami, Mariko Shimizu, Soichi Oikawa, B. Altansargai, Hiroaki Yoda
Publikováno v:
IEEE Transactions on Magnetics. 53:1-4
Voltage-control spintronics memory (VoCSM) is a spintronics-based memory that uses the voltage-control-magnetic-anisotropy (VCMA) effect as a selection method and the spin-Hall effect as a write method, and is a candidate for future nonvolatile main
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b7d46fe8b276dc1e2bb5d426cbebe79
https://doi.org/10.1109/tmag.2017.2691764
https://doi.org/10.1109/tmag.2017.2691764
Autor:
Naoharu Shimomura, Yuichi Ohsawa, Atsushi Kurobe, Hideyuki Sugiyama, K. Koi, Y. Kato, Satoshi Shirotori, Hiroaki Yoda, Soichi Oikawa, Tomoaki Inokuchi, Mariko Shimizu, B. Altansargai
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
We successfully demonstrated write tests in voltage-control spintronics memory (VoCSM) in which in-plane magnetic tunnel junctions (MTJs) with aspect ratio of about 1 (AR1) were used. Retention energy as large as that in MTJs with an aspect ratio of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de90b8df3594fc274e819ccc62b1723e
https://doi.org/10.1109/edtm.2019.8731241
https://doi.org/10.1109/edtm.2019.8731241
Autor:
B. Altansargai, Yuichi Ohsawa, Y. Kato, S. Fujita, Satoshi Shirotori, Tomoaki Inokuchi, Susumu Takeda, Atsushi Kurobe, Soichi Oikawa, Mariko Shimizu, K. Koi, Kazutaka Ikegami, Hiroaki Yoda, Hideyuki Sugiyama, Naoharu Shimomura, Satoshi Takaya
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
We report a novel convolutional neural network (CNN) accelerator utilizing “voltage control spintronics memory” (VoCSM). High throughput processing is achieved by high speed in-“nonvolatile memory”-computation using high density VoCSM array.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4127bb36a8c18dfa8f948cd811d890d
https://doi.org/10.1109/edtm.2019.8731182
https://doi.org/10.1109/edtm.2019.8731182
Autor:
A. Tiwari, Tomoaki Inokuchi, Mariko Shimizu, B. Altansargai, Yushi Kato, Mizue Ishikawa, Naoharu Shimomura, Hiroaki Yoda, Soichi Oikawa, Atsushi Kurobe, K. Koi, Satoshi Shirotori, Yoshiaki Saito, Hideyuki Sugiyama, Yuichi Ohsawa
Publikováno v:
Physical Review Applied. 10
Magnetic random-access memory (MRAM) using spin-transfer torque for write operations has been intensively developed as a technology for saving energy. The authors' recently presented voltage-controlled spintronic memory (VoCSM), which instead employs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::319571961a82a92a2edd94385d196155
https://doi.org/10.1103/physrevapplied.10.044011
https://doi.org/10.1103/physrevapplied.10.044011
Autor:
Atsushi Kurobe, Katsuhiko Koi, Satoshi Shirotori, Soichi Oikawa, Keiko Fujii, Yuichi Ohsawa, Yushi Kato, Tomoaki Inokuchi, B. Altansargai, Hideyuki Sugiyama, Hiroaki Yoda, Naoharu Shimomura, Mariko Shimizu, Masahiko Yoshiki
Publikováno v:
Journal of Magnetism and Magnetic Materials. 491:165536
We investigated a voltage-control spintronics memory (VoCSM) with a shunt-free design process and W spin-Hall electrode. We successfully reduced the write current to 62 μA at a 5-ns write pulse (48 μA at a 20-ns write pulse), utilizing a high spin-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a473ab1f4b27edd0bbc3feccb824d51b
https://doi.org/10.1016/j.jmmm.2019.165536
https://doi.org/10.1016/j.jmmm.2019.165536
Autor:
Atsushi Kurobe, Tiwari Ajay, Hiroaki Yoda, Yushi Kato, Mizue Ishikawa, Soichi Oikawa, Naoharu Shimomura, K. Koi, Hideyuki Sugiyama, Buyandalai Altansargai, Tomoaki Inokuchi, Mariko Shimizu, Yuichi Ohsawa, Satoshi Shirotori
Publikováno v:
VLSI Circuits
Voltage Control Spintronics Memory (VoCSM) is a magnetic memory combining the spin Hall effect and Voltage Controlled Magnetic Anisotropy (VCMA). It has the potential to make MRAM work faster. In this paper, we described memory design of a write wind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::218afddc22f0b3c27f580ac795603d66
https://doi.org/10.1109/vlsic.2018.8502420
https://doi.org/10.1109/vlsic.2018.8502420
Autor:
Hideyuki Sugiyama, Mizue Ishikawa, Tomoaki Inokuchi, Mariko Shimizu, Naoharu Shimomura, Atsushi Kurobe, K. Koi, A. Tiwari, Yuichi Ohsawa, Yushi Kato, Yoshiaki Saito, Satoshi Shirotori, Buyandalai Altansargai, Hiroaki Yoda, Soichi Oikawa
Publikováno v:
2018 IEEE International Magnetics Conference (INTERMAG).
The requirement of low power consumption, high speed, high endurance for emerging next generation universal memory, a three terminal (separate read/write terminals) spin-orbit-torque (SOT) based non-volatile memory (SOT-MRAM) devices have been gainin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3be939213e0596bb4a72973ca55af88
https://doi.org/10.1109/intmag.2018.8508159
https://doi.org/10.1109/intmag.2018.8508159
Autor:
Tomoaki Inokuchi, Naoharu Shimomura, Mariko Shimizu, Mizue Ishikawa, A. Tiwari, Yoshiaki Saito, Atsushi Kurobe, K. Koi, Y. Kato, Satoshi Shirotori, Hideyuki Sugiyama, Yuichi Ohsawa, Buyandalai Altansargai, Soichi Oikawa, Hiroaki Yoda
Publikováno v:
2018 IEEE International Magnetics Conference (INTERMAG).
In recent years, writing data in magnetic random access memory (MRAM) utilizing voltage controlled magnetic anisotropy (VCMA) has attracted much attention for its potential low power consumption [1]. We proposed voltage-control spintronics memory (Vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab34c4656fb5a42cb8ad2a4d38a6ef61
https://doi.org/10.1109/intmag.2018.8508141
https://doi.org/10.1109/intmag.2018.8508141