Zobrazeno 1 - 10
of 250
pro vyhledávání: '"Yuichi Ochiai"'
Autor:
Nobuyuki Aoki, Bi-Yi Wu, Chieh-I Liu, Masahiro Matsunaga, Masaaki Mineharu, Kenji Watanabe, Chiashain Chuang, Takashi Taniguchi, Chi-Te Liang, Gil-Ho Kim, L.-H. Lin, Naoki Matsumoto, Yuichi Ochiai
Publikováno v:
Journal of Nanomaterials, Vol 2018 (2018)
We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the nonequilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as
Autor:
Nobuyuki Aoki, Yuichi Ochiai
Publikováno v:
Fullerene Nanowhiskers ISBN: 9781351042147
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1db1a5f07c184c7801996b440dcd61
https://doi.org/10.1201/9781351042147-16
https://doi.org/10.1201/9781351042147-16
Fullerenes became a new member of carbon allotropes in addition to diamond and graphite after the discovery of C60 (carbon 60) by Kroto et al. in 1985. The model of C60 was first proposed by Osawa in 1970. C60 is a hollow spherical molecule composed
Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors
Autor:
Pulickel M. Ajayan, Jonathan P. Bird, Robert Vajtai, Nobuyuki Aoki, Yongji Gong, Peter Krüger, Masahiro Matsunaga, Ayaka Higuchi, Tetsushi Yamada, G. He, Yuichi Ochiai
Publikováno v:
ACS Nano. 10:9730-9737
Utilizing an innovative combination of scanning-probe and spectroscopic techniques, supported by first-principles calculations, we demonstrate how electron-beam exposure of field-effect transistors, implemented from ultrathin molybdenum disulfide (Mo
Autor:
Chang-Shun Hsu, Chi-Te Liangl, Tak-Pong Woo, Takahiro Ouchi, Nobuyuki Aoki, Akram M. Mahjoub, Chia-Pei Chin, L.-H. Lin, Chiashain Chuang, Yuichi Ochiai
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:1195-1198
We have performed transport measurements on a multi-layer graphene device fabricated by conventional mechanical exfoliation. By using the zero-field resistance of our graphene device as a self-thermometer, we are able to determine the effective Dirac
Autor:
Gil-Ho Kim, Yuichi Ochiai, Nobuyuki Aoki, David K. Ferry, Masahiro Matsunaga, Naoki Matsumoto, Carlo R. da Cunha, Takashi Taniguchi, Masaaki Mineharu, Kenji Watanabe, Kenichi Oto, Chiashain Chuang
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 29(22)
A flake of monolayer graphene was sandwiched between boron nitride sheets. Temperature dependent Shubnikov–de Haas measurements were performed to access how this technique influences the electronic properties of the graphene sample. The maximum mob
Autor:
Tak-Pong Woo, Chi-Te Liang, Nobuyuki Aoki, Yuichi Ochiai, Akram M. Mahjoub, Chiashain Chuang, Li-Hung Lin, Takahiro Ouchi, Chang-Shun Hsu, Chia-Pei Chin
Publikováno v:
Current Applied Physics. 14:108-111
We have performed magneto transport measurements on a multi-layer graphene device fabricated by conventional mechanical exfoliation. Suppression of weak localization (WL) as evidenced by the negative magnetoresistance (NMR) centered at zero field, an
Autor:
Masahiro, Matsunaga, Ayaka, Higuchi, Guanchen, He, Tetsushi, Yamada, Peter, Krüger, Yuichi, Ochiai, Yongji, Gong, Robert, Vajtai, Pulickel M, Ajayan, Jonathan P, Bird, Nobuyuki, Aoki
Publikováno v:
ACS nano. 10(10)
Utilizing an innovative combination of scanning-probe and spectroscopic techniques, supported by first-principles calculations, we demonstrate how electron-beam exposure of field-effect transistors, implemented from ultrathin molybdenum disulfide (Mo
Autor:
Yuichi Ochiai, Naoki Matsumoto, Takashi Taniguchi, C.R. da Cunha, Masaaki Mineharu, Kenji Watanabe, Nobuyuki Aoki, Masahiro Matsunaga, Gil-Ho Kim, David K. Ferry, Chiashain Chuang
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Scientific Reports
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Scientific Reports
We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for erg