Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Yuichi Nishimae"'
Publikováno v:
Journal of Photopolymer Science and Technology. 22:89-95
Extreme Ultraviolet (EUV) has already achieved the initial requirements for 32 nm DRAM half pitch lithography rule and is known as one of the most promising next generation lithography techniques to be realized for 22 nm patterning technology though
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159afd887dd871938cb9a86e12b3d2bd
https://doi.org/10.2494/photopolymer.22.89
https://doi.org/10.2494/photopolymer.22.89
Publikováno v:
Journal of Photopolymer Science and Technology. 21:377-381
So far, we have developed and reported a series of novel oxime sulfonate type of photoacid generators (PAG) composed of a fluorenyl chromophore like 2-[2,2,3,3,4,4,5,5-octafluoro-1-(nonafluorobutylsulfonyloxyimino)-pentyl]-fluorene (ONPF), which gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::730f748c552e1a2b1f1959b3d9627210
https://doi.org/10.2494/photopolymer.21.377
https://doi.org/10.2494/photopolymer.21.377
Autor:
Akira Matsumoto, Yuichi Nishimae, Tobias Hinterman, Junichi Tanabe, Jean-Luc Birbaum, Masaki Ohwa, Toshikage Asakura, Peter Murer, Hitoshi Yamamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 20:637-642
Oxime sulfonate compounds are one of the important chemistry as photoacid generator for advanced lithography application and practically used in mass production of semiconductor chips. This chemistry is adjustable for various applications like g-/h-/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15116cbedd30faee0d989dd8295272aa
https://doi.org/10.2494/photopolymer.20.637
https://doi.org/10.2494/photopolymer.20.637
Publikováno v:
Journal of Photopolymer Science and Technology. 20:465-471
Recently we have developed and reported some novel non-ionic photoacid generators (PAGs) which generate a strong acid (perfluorobutanesulfonic acid) by light irradiation and is applicable to chemically amplified ArF photoresist, such as 2-[2,2,3,3,4,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b14b9c77718f2445559dad423311289
https://doi.org/10.2494/photopolymer.20.465
https://doi.org/10.2494/photopolymer.20.465
Publikováno v:
Angewandte Chemie. 116:5055-5058
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::972ed3bc720f10dc30c2a482695c8643
https://doi.org/10.1002/ange.200460480
https://doi.org/10.1002/ange.200460480
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
The development of semiconductor chips is making progress with an astonishing speed, enabling electronic apparatus smaller, higher speed, and higher performance. This dynamic advancement is significantly attributable from the development of photolith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0427e16ababd3dd46d7f907c3186ce9
https://doi.org/10.1117/12.770883
https://doi.org/10.1117/12.770883
Publikováno v:
SPIE Proceedings.
Recently we have developed and reported some novel non-ionic photoacid generators (PAGs) which generate a strong acid (perfluorobutanesulfonic acid) by light irradiation and is applicable to chemically amplified ArF photoresist, such as 2-[2,2,3,3,4,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98258ad0bdbc0c7cbc6de30ce57b2ccc
https://doi.org/10.1117/12.708399
https://doi.org/10.1117/12.708399
Autor:
Masahiro Kyusho, Kouzou Matsumoto, Masaji Oda, Hiroyuki Kurata, Yuichi Nishimae, Takeshi Kawase
Publikováno v:
Chemistry Letters. 36:540-541
The title compound, a new anthracene-containing triptycene derivative, was synthesized. The crystal structure shows its strained configuration and intermolecular π–π stacking arrangement. Photochem...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74dca81e7bc818bc9fdbb0cdc5417fa9
https://doi.org/10.1246/cl.2007.540
https://doi.org/10.1246/cl.2007.540
Publikováno v:
Angewandte Chemie International Edition; Sep2004, Vol. 43 Issue 37, p4947-4950, 4p