Zobrazeno 1 - 10 of 20 pro vyhledávání: '"Yuichi Minoura"'
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Akademický článek
High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers
Autor: Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto
Publikováno v: Electronics Letters, Vol 59, Iss 4, Pp n/a-n/a (2023)
Abstract This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer + Indium gallium nitride (InGaN)‐BB structure. The authors found that
Externí odkaz: https://doaj.org/article/e884dbfc5aef45eea2bf03ce48d6a2f8
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2
An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader
Autor: Atsushi Yamada, Masaru Sato, Norikazu Nakamura, Naoya Okamoto, Kozo Makiyama, Yuichi Minoura, Junji Kotani, Kazukiyo Joshin, Shiro Ozaki, Toshihiro Ohki
Publikováno v: IEEE Electron Device Letters. 40:287-290
This letter reports on an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm. A quaternary In-added InAlGaN barrier enabled both the large current of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9d451053e15ab0c96207c500f487716f
https://doi.org/10.1109/led.2018.2884918
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3
GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process
Autor: Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto, Masaru Sato, Shiro Ozaki, Atsushi Yamada, Junji Kotani
Publikováno v: Applied Physics Express. 15:036501
GaN monolithic microwave integrated circuits (MMICs) on a diamond heat spreader were successfully fabricated and demonstrated. The diamond was bonded to the back-side surface of the GaN on SiC devices by atomic diffusion bonding. In addition, through
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f379b984ea8dd2bf2b14c28814268191
https://doi.org/10.35848/1882-0786/ac5222
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5
Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates
Autor: Yoshitaka Niida, Shiro Ozaki, Kozo Makiyama, Yusuke Kumazaki, Yuichi Minoura, Junji Kotani, Toshihiro Ohki, Norikazu Nakamura, Naoya Okamoto, Keiji Watanabe
Publikováno v: BCICTS
The current collapse phenomena, particularly the trap-induced threshold voltage shift, was drastically reduced in GaN high-electron-mobility transistors (GaN-HEMTs) fabricated on GaN free-standing substrates. High breakdown voltage of 376 V was achie
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::37d9cd85c0b798bd23a3a5fc10eabec0
https://doi.org/10.1109/bcicts45179.2019.8972742
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6
Recent advancement of GaN HEMT with InAlGaN barrier layer and future prospects of A1N-based electron devices
Autor: Shirou Ozaki, Junji Kotani, Kozo Makiyama, Naoya Okamoto, Toshihiro Ohki, Norikazu Nakamura, Yuichi Minoura, Atsushi Yamada
Publikováno v: 2018 IEEE International Electron Devices Meeting (IEDM).
The high-power operation of InAlGaN/GaN high-electron-mobility transistor (HEMT) amplifiers in the wide-frequency range from the S-band to the W-band has been achieved. A re-grown n+-GaN contact layer and an InGaN back-barrier layer was employed for
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::286cd6c45a265f05fcb3ee52dbd0e323
https://doi.org/10.1109/iedm.2018.8614519
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7
First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density
Autor: Toshihiro Ohki, Junya Yaita, Yusuke Kumazaki, Junji Kotani, Naoya Okamoto, Atsushi Yamada, Norikazu Nakamura, Yuichi Minoura, Shiro Ozaki
Publikováno v: Applied Physics Express. 14:041004
In this letter, we successfully achieved high-power radio frequency (RF) operation of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on free-standing AlN substrate at X-band. The developed HEMT on AlN substrate comprised a 200 nm thi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3afd039f4346082785463716885d5869
https://doi.org/10.35848/1882-0786/abec90
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8
Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates
Autor: Yoshitaka Niida, Shiro Ozaki, Naoya Okamoto, Keiji Watanabe, Toshihiro Ohki, Masaru Sato, Yusuke Kumazaki, Masato Nishimori, Junji Kotani, Norikazu Nakamura, Yuichi Minoura
Publikováno v: Applied Physics Express. 14:016502
This paper demonstrates highly efficient GaN high-electron-mobility transistors (HEMTs) on GaN substrates with reduced interface contamination. By applying a hydrofluoric acid-based pre-growth treatment to a GaN substrate, the Si impurity concentrati
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3494008fe1feace47140bcc6a9638240
https://doi.org/10.35848/1882-0786/abc1cc
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