Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yuichi Kanayama"'
Publikováno v:
The Proceedings of Conference of Tokai Branch. :604
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e194939a7c56a158200e184081934f7
https://doi.org/10.1299/jsmetokai.2017.66.604
https://doi.org/10.1299/jsmetokai.2017.66.604
Autor:
Yuichi Kanayama, Ito Takashi, Takashi Yoshida, Kazuhiro Nagase, Masaki Yamamoto, Tatsuro Iwabuchi, Kentaro Sako, Ichiro Shibasaki, Fumiaki Ichimori
Publikováno v:
Journal of Crystal Growth. 150:1302-1306
We have newly developed Hall elements consisting of Si-doped InAs thin film grown on GaAs substrate by molecular beam epitaxy (MBE). By doping Si into the layer of InAs thin films far from the InAs/GaAs interface, InAs thin films with high electron m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab804c7c97b481c8da7bf4dedee0da70
https://doi.org/10.1016/0022-0248(95)80149-7
https://doi.org/10.1016/0022-0248(95)80149-7
Publikováno v:
The Proceedings of Conference of Tokai Branch. :612-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f1464c1ec23db6df46af512cd442b45
https://doi.org/10.1299/jsmetokai.2016.65._612-1_
https://doi.org/10.1299/jsmetokai.2016.65._612-1_