Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Yuichi Ide"'
Autor:
Masamichi Yamada, Yuichi Ide
Publikováno v:
Surface Science. 339:L914-L918
Isothermal desorption of oxide layers formed on GaAs(001) surfaces of arsenic-rich c(4 × 4) reconstructions was observed at about 540°C using a quadrupole mass spectrometer. Ga 2 O and molecular arsenic desorbed in parallel. After long induction pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf9c20a52150c6a3d9b7def98997d077
https://doi.org/10.1016/0039-6028(95)80057-3
https://doi.org/10.1016/0039-6028(95)80057-3
Autor:
Yuichi Ide, Masamichi Yamada
Publikováno v:
Applied Surface Science. :310-315
GaAs surface photo-oxides formed by visible-light-enhanced oxidation have recently come to be used as in situ electron beam (EB) lithography masks for CI2 gas etching. We investigated the adsorption properties of chlorine on EB-irradiated GaAs photo-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2453d902014c9c240471a33f069e170
https://doi.org/10.1016/0169-4332(94)90233-x
https://doi.org/10.1016/0169-4332(94)90233-x
Autor:
Masamichi Yamada, Yuichi Ide
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:1858-1863
The role of Ga2O in the removal of GaAs surface oxides induced by atomic hydrogen (H⋅) has been studied using temperature‐programed desorption (TPD), x‐ray photoelectron spectroscopy, and low‐energy electron diffraction (LEED). GaAs(001) subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::330ada9227ac433ecb5685506a533d4f
https://doi.org/10.1116/1.579018
https://doi.org/10.1116/1.579018
Publikováno v:
Applied Surface Science. :531-535
The effect of an atomic-hydrogen (H ·) treatment on Ga2O3-like oxide on GaAs (001) was studied by temperature-programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS). Samples treated with H · at 210 and 300°C caused a new type of Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa7374e422e35de9c89d54233b4d562
https://doi.org/10.1016/0169-4332(93)90575-v
https://doi.org/10.1016/0169-4332(93)90575-v
Publikováno v:
Journal of Electronic Materials. 21:3-7
Damage induced by very low energy (30 eV) Cl reactive ion beam etching (RIBE) and radical etching (RE) has been electrically characterized. GaAs/n-AlGaAs two-dimensional electron gas heterostructures were used as damage sensitive probes. Sheet carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a3fcb58111a0d0c2c538438954ffc8
https://doi.org/10.1007/bf02670913
https://doi.org/10.1007/bf02670913
Autor:
Norihisa Matake, Tatsuo Kabata, Yuichi Ide, Nagao Hisatome, Takahiro Joujima, Kenichirou Kosaka
Publikováno v:
The proceedings of the JSME annual meeting. :183-184
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4e7c5df9eab42d6a149b9784eba8d46
https://doi.org/10.1299/jsmemecjo.2006.7.0_183
https://doi.org/10.1299/jsmemecjo.2006.7.0_183
Autor:
Nobuyuki Tanaka, Tomonori Ishikawa, Masamichi Yamada, Isamu Matsuyama, Yuichi Ide, Yoshifumi Katayama, Máximo López
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::568d0f9e86320240871d868264b3713b
https://doi.org/10.7567/ssdm.1994.s-i-8-1
https://doi.org/10.7567/ssdm.1994.s-i-8-1
Publikováno v:
Multichamber and In-Situ Processing of Electronic Materials.
We have developed a new fine -beam assisted GaAs maskless etching system capable of nanofabrication; a focused ion beam (FIB) and electron beam (EB) combined etching system with a reactive gas nozzle. In thisFIB /EB combined system, EB excited GaAs e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27166527f204d9a152931246676c826
https://doi.org/10.1117/12.963947
https://doi.org/10.1117/12.963947
Akademický článek
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Autor:
Masamichi Yamada, Yuichi Ide
Publikováno v:
Japanese Journal of Applied Physics. 33:L1378
The effects of electron beam (EB) irradiation and subsequent Cl2 exposure on GaAs surface photo-oxides were investigated using X-ray photoelectron spectroscopy. Photo-oxides formed by visible-light-enhanced oxidation of c(4×4) GaAs surfaces were irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43c9fb9bca166f02e06661f7dbc92acd
https://doi.org/10.1143/jjap.33.l1378
https://doi.org/10.1143/jjap.33.l1378