Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yuhzoh Tsuda"'
Autor:
Kenji Takahashi, Hiroshi Harima, Mototaka Taneya, Kenji Kisoda, Yuhzoh Tsuda, Daisuke Matsuoka, Takayuki Yuasa
Publikováno v:
physica status solidi c. 4:2802-2805
Blue-violet GaN-based laser diodes have been characterized by microscopic Raman scattering to obtain temperature distributions in the chip during operation. The local temperature increased steeply in the vicinity of the light-emitting layer at distan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90fd67dd4179422fd5fd04fe17c9f136
https://doi.org/10.1002/pssc.200674800
https://doi.org/10.1002/pssc.200674800
Publikováno v:
Journal of Applied Physics. 96:7136-7140
We investigated the growth of the GaN-rich side of GaNP films using metal-organic chemical-vapor deposition. The results of Auger electron spectroscopy suggest that phosphorus atoms incorporated into the film would be substituted on gallium sites rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a82827fb2de63a712b281c49edea8b
https://doi.org/10.1063/1.1812601
https://doi.org/10.1063/1.1812601
Autor:
Mototaka Taneya, Takayuki Yuasa, Yoshihiro Ueta, Hirokazu Mouri, Masahiro Araki, Yuhzoh Tsuda
Publikováno v:
physica status solidi (b). 240:404-407
We have investigated the growth of the GaN-rich side of GaNP films by metalorganic chemical vapor deposition (MOCVD). The GaNP samples were mainly analysed by using X-ray diffraction (XRD) and Auger electron spectroscopy (AES). From the XRD measureme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55d03ddd72601e0aa785bf176b4bb9a
https://doi.org/10.1002/pssb.200303297
https://doi.org/10.1002/pssb.200303297
Autor:
Wei-Sin Tan, Valerie Bousquet, Koji Takahashi, Masataka Ohta, Yuhzoh Tsuda, Matthias Kauer, Akira Ariyoshi
Publikováno v:
Applied Physics Express. 2:112101
We report on a novel method using lattice matched AlInN as the current confinement layer for inner stripe laser diodes. Optimisation of the sample preparation techniques and metal organic chemical vapor deposition (MOCVD) regrowth conditions resulted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02c939574831093f5cae0a6d79c5b158
https://doi.org/10.1143/apex.2.112101
https://doi.org/10.1143/apex.2.112101
Autor:
Pablo O. Vaccaro, Yoshiyuki Takahira, Teruyoshi Takakura, Yoshinobu Kawaguchi, Shuichi Hirukawa, Yoshie Fujishiro, Masataka Ohta, Yuhzoh Tsuda, Takayuki Yuasa, Shigetoshi Ito, Yoshihiro Ueta
Publikováno v:
Applied Physics Express. 1:011104
Blue laser diodes (LDs) were fabricated on m-plane oriented GaN substrates by atmospheric-pressure metalorganic chemical vapor deposition. Typical threshold current for stimulated emission at a wavelength λ of 463 nm was 69 mA. Blueshift of the spon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8606d49bc2596c7e7b896fa3f718fdd
https://doi.org/10.1143/apex.1.011104
https://doi.org/10.1143/apex.1.011104
Autor:
Hiroshi Harima, Mototaka Taneya, Noriyuki Hasuike, Hirokazu Mouri, Takayuki Yuasa, Yuhzoh Tsuda
Publikováno v:
Applied Physics Letters. 87:201916
For investigating the strain reduction in a GaN layer on a sapphire substrate, double heterostructures of the upper GaN layer/GaN-rich GaNP interlayer as a compliant buffer layer/lower GaN layer were grown by metalorganic chemical vapor deposition. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1622bb3cb3ea60c8b8e61ecc58e50eb2
https://doi.org/10.1063/1.2132535
https://doi.org/10.1063/1.2132535
Publikováno v:
Applied Physics Letters. 85:4361
GaN-based GaN1−xAsx alloys, x⩽0.043, were grown by metalorganic chemical vapor deposition. The results of high-resolution x-ray diffraction measurements indicated that no phase separation was observed over a range of up to x=0.043 and both the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52fa43e6c407eb0f3e7a6c751a2e7100
https://doi.org/10.1063/1.1819513
https://doi.org/10.1063/1.1819513
Autor:
Mototaka Taneya, Katsutoshi Takao, Atushi Ogawa, Yoshihiro Ueta, Takayuki Yuasa, Yuhzoh Tsuda
Publikováno v:
Japanese Journal of Applied Physics. 38:L703
The effects of slight misorientation from c-plane (0001) sapphire (α-Al2O3) substrates on GaN surface morphologies and electroluminescence (EL) properties were studied. The GaN layers were grown using a two-step growth method under atmospheric press
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2cee6e691269d819b7b91612616ed1f
https://doi.org/10.1143/jjap.38.l703
https://doi.org/10.1143/jjap.38.l703
Autor:
Yuhzoh Tsuda, Hirokazu Mouri, Masahiro Araki, Yoshihiro Ueta, Takayuki Yuasa, Mototaka Taneya
Publikováno v:
Physica Status Solidi (B); Nov2003, Vol. 240 Issue 2, p404-407, 4p
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