Zobrazeno 1 - 10
of 204
pro vyhledávání: '"Yuhua Zuo"'
Autor:
Junquan Zeng, Si Dong, Chao Chen, Yongliang Zheng, Yuhua Zuo, Yuxin Liu, Ting Ding, Fasheng Liu, Qinyuan Shen, Yunyun Du, Xiaoping Wang, Wenguo Xie, Chenjun Zhou, Huiqiang Lu
Publikováno v:
Ecotoxicology and Environmental Safety, Vol 284, Iss , Pp 116902- (2024)
Benzalkonium chloride (BAC) is a broad-spectrum antibacterial agent that possesses cleaning and bactericidal properties, but impact of BAC on wellbeing of aquatic organisms remains uncertain. Consequently, in this current study, we have examined the
Externí odkaz:
https://doaj.org/article/173e9d26fe2b4adb913ac500dbb155e3
Publikováno v:
Molecules, Vol 29, Iss 11, p 2479 (2024)
Metal halide perovskites have attracted considerable attention as novel optoelectronic materials for their excellent optical and electrical properties. Inorganic perovskites (CsPbX3, X = Cl, Br, I) are now viable alternative candidates for third-gene
Externí odkaz:
https://doaj.org/article/2a3d526574ca4a67a6c73b9b10d29420
Autor:
Nan Wang, Chunlai Xue, Fengshuo Wan, Yue Zhao, Guoyin Xu, Zhi Liu, Jun Zheng, Yuhua Zuo, Buwen Cheng, Qiming Wang
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 2, Pp 1-9 (2021)
We report the design and fabrication of a high-speed GeSn normal-incidence p-i-n photodetector. To realize high-speed detection in all telecommunication bands, we optimize the Sn content in the absorption layer, the absorption-layer thickness, and th
Externí odkaz:
https://doaj.org/article/9228d0c5f73746208c00acd434eb2647
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied.
Externí odkaz:
https://doaj.org/article/c9919ed76d6e4bce982980774c7706e4
Autor:
Siyu Cao, Yue Zhao, Sajid ur Rehman, Shuai Feng, Yuhua Zuo, Chuanbo Li, Lichun Zhang, Buwen Cheng, Qiming Wang
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-15 (2018)
Abstract In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built. Through theoretical analysis and two-dimensio
Externí odkaz:
https://doaj.org/article/f358fcd11a3f47518440d40bad2e8190
Publikováno v:
AIP Advances, Vol 5, Iss 12, Pp 127241-127241-6 (2015)
N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation
Externí odkaz:
https://doaj.org/article/297abd15df784831afbb821a24d02d4b
Publikováno v:
Tsinghua Science and Technology. 28:150-154
Publikováno v:
Tsinghua Science and Technology. 28:131-140
Autor:
Xiangquan Liu, Taoran Liu, Dan Chen, Yazhou Yang, Zhenglan Ye, Yuhua Zuo, Jun Zheng, Zhi Liu, Buwen Cheng
Publikováno v:
ACS Applied Optical Materials. 1:507-512
Autor:
Abolfazl Amraeinia, Yuhua Zuo, Jun Zheng, Zhi Liu, Guangze Zhang, Liping Luo, Buwen Cheng, Xiaoping Zou, Chunbo Li
Publikováno v:
Tsinghua Science and Technology. 27:741-750