Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Yuhao Ben"'
Publikováno v:
Journal of Materials Research and Technology, Vol 21, Iss , Pp 2228-2237 (2022)
Direct evidence of composition pulling effect (CPE) in InGaN` quantum wells was obtained by combining energy dispersive x-ray spectrometry (EDS) and scanning tunneling electron microscope (STEM). The indium content increases along the c-axis in the I
Externí odkaz:
https://doaj.org/article/4195bb94ec66457eb41c2af27a51657e
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-8 (2021)
Abstract In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H2/NH3 gas mixture was i
Externí odkaz:
https://doaj.org/article/4363aa7995b5478d9ea418a5f6dd683a
Autor:
Zhenzhuo Zhang, Jing Yang, Degang Zhao, Baibin Wang, Yuheng Zhang, Feng Liang, Ping Chen, Zongshun Liu, Yuhao Ben
Publikováno v:
AIP Advances, Vol 12, Iss 9, Pp 095106-095106-8 (2022)
The reaction between gallium (Ga) and silicon (Si), termed melt-back etching, greatly deteriorates the quality of GaN grown on a Si substrate. In this paper, the mechanism of melt-back etching was investigated layer-by-layer in a GaN/AlN/Si system. I
Externí odkaz:
https://doaj.org/article/83c672ec8339462f88a11230eefadbc3
Publikováno v:
Nanomaterials, Vol 12, Iss 18, p 3114 (2022)
In this paper, the photoluminescence (PL) properties and surface morphology of InGaN/GaN multiple quantum well (MQW) structures with the hydrogen (H2) heat treatment of InGaN are investigated to elucidate the effect of hydrogen on the structure and s
Externí odkaz:
https://doaj.org/article/de0ba923afd341b69de7b8fa15a5d5f0
Publikováno v:
Crystals, Vol 12, Iss 6, p 839 (2022)
In this work, the photoluminescence (PL) properties of three as-grown InGaN/GaN multiple quantum well (MQW) structures which are heat-treated under different temperatures with nitrogen (N2) atmosphere are investigated. Temperature-dependent photolumi
Externí odkaz:
https://doaj.org/article/2c35c62e87aa40ffb16961d0a8eec76a
Publikováno v:
Crystals, Vol 12, Iss 2, p 171 (2022)
In this work, a GaN-based multiple quantum well (MQW) sample has a much higher IQE although it has a stronger non-radiative recombination. Through experimental verification, the higher IQE is attributed to the suppressed carrier leakage mechanism, wh
Externí odkaz:
https://doaj.org/article/7e15ec7ec79d4989920e8655df777428
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 1023 (2021)
An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abn
Externí odkaz:
https://doaj.org/article/ae055d18a8e948039c288bbff5a7dbd9
Autor:
Haoran Sun, Yuhui Chen, Yuhao Ben, Hongping Zhang, Yujie Zhao, Zhihao Jin, Guoqi Li, Mei Zhou
Publikováno v:
Materials
Volume 16
Issue 4
Pages: 1558
Volume 16
Issue 4
Pages: 1558
GaN cap layer with different thicknesses was grown on each InGaN well layer during MOCVD growth for InGaN/GaN multiple quantum well (MQW) samples to study the influence of the cap layer on the photoluminescence (PL) characteristics of MQWs. Through t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c96933dd5a28ab39f0e51b19fd2ce4f
Air pollution is one of the leading environmental risk factors, and anthropogenic pollution contributes to around 100,000 deaths each year in the United States, despite efforts to improve air quality. Prior research has suggested that social media ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ccc5c4d2a4252d25b14f263cf807a10
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-8 (2021)
In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H2/NH3 gas mixture was introduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::041654cb0ffda2f9ab72b2e0f1d368c5
https://doi.org/10.1186/s11671-021-03618-8
https://doi.org/10.1186/s11671-021-03618-8