Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yuh-Sheng Jean"'
Autor:
Yen Hsiao-Tsung, Luo Cheng-Wei, Ta-Hsun Yeh, Po-Chih Wang, Chih-Wei Lai, Yuh-Sheng Jean, Ka-Un Chan, Chih-Yu Tsai, Ying-Hsi Lin
Publikováno v:
2016 IEEE International Symposium on Electromagnetic Compatibility (EMC).
This paper represents a layout solution to reduce the on-chip couplings in between two BALUNs, which is implemented by UMC 28iim CMOS process. In advanced CMOS technology and circuit application applied for higher frequency, couplings are always an i
Publikováno v:
IEEE Microwave and Wireless Components Letters. 17:718-720
A Ku-band CMOS low-noise amplifier (LNA) with high interference-rejection (IR), wide gain control range, and low dc power consumption is presented. The LNA consists of two common-gate metal-oxide-semiconductor field-effect transistors interconnected
Autor:
Yuh-Sheng Jean, Ching-Yuan Wu
Publikováno v:
IEEE Transactions on Electron Devices. 44:441-447
A new analytic threshold-voltage model for a MOSFET device with localized interface charges is presented. Dividing the damaged MOSFET device into three zones, the surface potential is obtained by solving the two-dimensional (2-D) Poisson's equation.
Autor:
Ching-Yuan Wu, Yuh-Sheng Jean
Publikováno v:
IEEE Transactions on Electron Devices. 43:946-953
A new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFETs is presented, which is based on the well-known resistance method with a special technique to eliminate the uncertainty of the channel length and to reduce
Publikováno v:
2008 IEEE Radio Frequency Integrated Circuits Symposium.
This study demonstrates an RF active device based on A-LDD (asymmetric lightly doped drain) MOSFET structure which has higher drain to gate and drain to source breakdown voltage due to removing LDD and halo doped region from the drain side. It is sui
Autor:
Kai-Yi Huang, R. Kuan, Han-Jung Shih, Chin-Lung Li, Po-Ching Lin, Shih-Min Lin, Chih-Kai Chien, Yi-Chang Shih, Wen-Shan Wang, Chao-Hua Lu, Yuh-Sheng Jean, Ming-Chung Huang, Tsung-Ming Chen, Yi-Jay Lin, Yung-Ming Chiu, Hong-Ta Hsu, Po-Yu Chen, Ying-His Lin, Ka-Un Chan
Publikováno v:
2008 IEEE Radio Frequency Integrated Circuits Symposium.
A low-power transceiver for 802.11n in 65 nm CMOS technology is presented. It supports 2times2 MIMO to satisfy the requirement of the draft 802.11n standard. In receiver chain it shows 5.3 dB low noise figure. In transmit chain an on-chip PA driver d
Autor:
Li-Shyue Lai, Lurng-Sheng Lee, Yu-Min Hsu, Shin-Chii Lu, Hang-Ping Hwang, Yang-Tai Tseng, Ming-Jim Tsai, Yuh-Sheng Jean
Publikováno v:
2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567).
A high quality low temperature oxide technology (LTO) was introduced as the emitter/base junction isolation layer of a Silicon-Germanium. (SiGe) HBT. Due to its lower Ge strain relaxation and boron out-diffusion effect, we showed that devices were ob
Publikováno v:
2008 IEEE Radio Frequency Integrated Circuits Symposium; 2008, p263-266, 4p
Autor:
Yung-Ming Chiu, Tsung-Ming Chen, Po-Yu Chen, Kuan, R., Yi-Chang Shih, Yi-Jay Lin, Chin-Lung Li, Yuh-Sheng Jean, Kai-Yi Huang, Shih-Min Lin, Chih-Kai Chien, Po-Ching Lin, Wen-Shan Wang, Hong-Ta Hsu, Ming-Chung Huang, Chao-Hua Lu, Han-Jung Shih, Ka-Un Chan, Ying-His Lin
Publikováno v:
2008 IEEE Radio Frequency Integrated Circuits Symposium; 2008, p97-100, 4p
Autor:
Li-Shyue Lai, Yang-Tai Tseng, Lurng-Sheng Lee, Yuh-Sheng Jean, Yu-Min Hsu, Hang-Ping Hwang, Shin-Chii Lu, Ming-Jim Tsai
Publikováno v:
2001 International Symposium on Electron Devices for Microwave & Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567); 2001, p77-82, 6p