Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yueze Tan"'
Autor:
Haidong Lu, Yueze Tan, Leonie Richarz, Jiali He, Bo Wang, Dennis Meier, Long‐Qing Chen, Alexei Gruverman
Publikováno v:
Advanced Functional Materials. 33
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f3100fcafcbfa63c7700dc46653ea5b
https://doi.org/10.1002/adfm.202213684
https://doi.org/10.1002/adfm.202213684
Autor:
Bo Wang, Long Qing Chen, Antonius T. J. van Helvoort, Dennis Meier, James P. V. McConville, Theodor S. Holstad, Petra Becker, Ohheum Bak, Alexei Gruverman, Kasper A. Hunnestad, Igor A. Luk'yanchuk, J. Marty Gregg, Yueze Tan, Haidong Lu, Ladislav Bohatý, Valerii M. Vinokur, Donald M. Evans
Publikováno v:
Baek, O, Holstad, T S, Tan, Y, Lu, H, Evans, D, Hunnestad, K A, Wang, B, McConville, J, Becker, P, Bohaty, L, Lukyanchuk, I, Vinokur, V M, van Helvoort, A T J, Gregg, M, Chen, L-Q, Meier, D & Gruverman, A 2020, ' Observation of Unconventional Dynamics of Domain Walls in Uniaxial Ferroelectric Lead Germanate ', Advanced Functional Materials, vol. 30, no. 21, 2000284 . https://doi.org/10.1002/adfm.202000284
Application of the scanning probe microscopy techniques, such as Piezoresponse Force Microscopy (PFM), opens a possibility to re-visit the ferroelectrics previously studied by the macroscopic electrical testing methods and establish a link between th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::910cf7eb84586627d07a025be6f5395e
https://pure.qub.ac.uk/en/publications/observation-of-unconventional-dynamics-of-domain-walls-in-uniaxial-ferroelectric-lead-germanate(2c69167e-3466-40dd-8e87-07ee468fee21).html
https://pure.qub.ac.uk/en/publications/observation-of-unconventional-dynamics-of-domain-walls-in-uniaxial-ferroelectric-lead-germanate(2c69167e-3466-40dd-8e87-07ee468fee21).html
Autor:
Charlotte Cochard, Michele Conroy, Kalani Moore, Long Qing Chen, J. Marty Gregg, Ursel Bangert, Yueze Tan, Haidong Lu, James P. V. McConville, Alexei Gruverman, Bo Wang, Alan Harvey
Publikováno v:
Advanced Functional Materials
McConville, J P V, Lu, H, Wang, B, Tan, Y, Cochard, C, Conroy, M, Harvey, A, Bangert, U, Chen, L-Q, Gruverman, A & Gregg, J M 2020, ' Ferroelectric Domain Wall Memristor ', Advanced Functional Materials, vol. 122, 2000109 . https://doi.org/10.1002/adfm.202000109
McConville, J P V, Lu, H, Wang, B, Tan, Y, Cochard, C, Conroy, M, Harvey, A, Bangert, U, Chen, L-Q, Gruverman, A & Gregg, J M 2020, ' Ferroelectric Domain Wall Memristor ', Advanced Functional Materials, vol. 122, 2000109 . https://doi.org/10.1002/adfm.202000109
A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc253e90b5dbef745e28990f76cc558a
http://europepmc.org/articles/PMC7357591
http://europepmc.org/articles/PMC7357591
Autor:
Myung-Geun Han, Yangyang Zhang, Fei Xue, Yimei Zhu, Paul Munroe, Yueze Tan, Joseph A. Garlow, Long Qing Chen, Nagarajan Valanoor
Publikováno v:
Nano letters. 19(8)
Composition gradients, or dissimilar ferroelectric bilayers, demonstrate colossal electromechanical figures of merit attributed to the motion of ferroelastic domain walls. Yet, mechanistic understanding of polarization switching pathways that drive f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::750d831d312b2f6d63a260d7976b1b8c
https://pubmed.ncbi.nlm.nih.gov/31268341
https://pubmed.ncbi.nlm.nih.gov/31268341
Autor:
Haidong, Lu, Yueze, Tan, James P V, McConville, Zahra, Ahmadi, Bo, Wang, Michele, Conroy, Kalani, Moore, Ursel, Bangert, Jeffrey E, Shield, Long-Qing, Chen, J Marty, Gregg, Alexei, Gruverman
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 31(48)
Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low-dimensional electronic systems. One of the most prominent features of the ferroelectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1e403b91d8507bf02e49a1e784fc30f1
https://pubmed.ncbi.nlm.nih.gov/31588637
https://pubmed.ncbi.nlm.nih.gov/31588637
Autor:
Daniel Sando, Myung-Geun Han, Nagarajan Valanoor, Long Qing Chen, Yueze Tan, Yangyang Zhang, Yimei Zhu
Publikováno v:
Advanced Functional Materials. 30:2003571
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1bfff4aaab09093dac17170b2fecb01
https://doi.org/10.1002/adfm.202003571
https://doi.org/10.1002/adfm.202003571
Autor:
Michele Conroy, Long Qing Chen, Bo Wang, Kalani Moore, Zahra Ahmadi, James P. V. McConville, Yueze Tan, Haidong Lu, J. Marty Gregg, Ursel Bangert, Jeffrey E. Shield, Alexei Gruverman
Publikováno v:
Lu, H, Tan, Y, McConville, J P V, Ahmadi, Z, Wang, B, Conroy, M, Moore, K, Bangert, U, Shield, J, Chen, L-Q, Gregg, J & Gruverman, A 2019, ' Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films ', Advanced Materials, vol. 31, no. 48, 1902890 . https://doi.org/10.1002/adma.201902890
Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low-dimensional electronic systems. One of the most prominent features of the ferroelectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb73d569a32239842d94126483ba266f
https://doi.org/10.1002/adma.201902890
https://doi.org/10.1002/adma.201902890