Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yuexing Yan"'
Publikováno v:
Transactions of Tianjin University. 23:168-175
A 0.18 µm CMOS low noise amplifier (LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. T
Publikováno v:
Applied Sciences, Vol 14, Iss 13, p 5615 (2024)
The study of formation pressure holds great significance for both exploration and development. The formation pressure coefficient is a crucial parameter in geology, encompassing various aspects. Numerous models exist to explore its influencing factor
Externí odkaz:
https://doaj.org/article/be33939df5a04457b5f9ae99a9831cc6
Publikováno v:
Microelectronics Reliability. 52:2568-2571
The radio frequency (RF) characteristics of proton irradiated large-area silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature of 77 K and high temperature of ∼430 K) are reported
Publikováno v:
2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
In this paper a 1.8 V, 2.4 GHz CMOS fully integrated low noise amplifier (LNA) has been implemented in 0.18 μm RF CMOS process for Wireless Local Area Net (WLAN) and Bluetooth band. Acceptable consumption with higher voltage and power gain are achie
Autor:
Yuexing Yang
Publikováno v:
Abstract and Applied Analysis, Vol 2014 (2014)
We obtained the algebraic L2 time decay rate for weak solutions of the nonlinear heat equations with the nonlinear term ∇u2u in whole space R3. The methods are based on energy methods and Fourier analysis technique.
Externí odkaz:
https://doaj.org/article/9559f8b2d51e471b93eaed8281252032
Publikováno v:
2013 IEEE International Conference of Electron Devices & Solid-state Circuits; 2013, p1-2, 2p