Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Yuen Yee Wong"'
Publikováno v:
AAOU Journal, Vol 11, Iss 2, Pp 216-227 (2016)
Purpose - The purpose of this paper is to analyse the research trends in the field of open and distance learning (ODL) as reflected in journal articles. Design/methodology/approach - It compares research articles published in 2005 and 2015. Content a
Externí odkaz:
https://doaj.org/article/fa7cbdaef85e4715abec19628cf2b55f
Publikováno v:
Education Innovation Series ISBN: 9789811565908
Among the key areas of student support, wellness has been regarded as crucial. While student services for wellness are commonplace in face-to-face teaching institutions, distance learning (DL) students have far fewer opportunities to access such serv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef988b24f697e774692f20c499658f4
https://doi.org/10.1007/978-981-15-6591-5_17
https://doi.org/10.1007/978-981-15-6591-5_17
Publikováno v:
Education Innovation Series ISBN: 9789811565908
This chapter presents an institution-wide programme for building up its research capacity for a teaching university offering open and flexible programmes. The university is keen to excel in teaching through research which serves the strategic value o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba9d6bb667b23e632390a28d5350311f
https://doi.org/10.1007/978-981-15-6591-5_24
https://doi.org/10.1007/978-981-15-6591-5_24
Publikováno v:
Microelectronics Reliability. 83:286-292
High crystalline quality AlGaN films were grown on GaN templates by metalorganic chemical vapor deposition (MOCVD). Inhomogeneous distributions of Al compositions in both the vertical and lateral growth direction caused by the strong gas-phase pre-re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77c3a2c38a9eeefd2ba1ade8ac943408
https://doi.org/10.1016/j.microrel.2017.07.021
https://doi.org/10.1016/j.microrel.2017.07.021
Publikováno v:
Journal of Electronic Materials. 46:6104-6110
NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6efccd3f374866b244c7c0f5bb7af547
https://doi.org/10.1007/s11664-017-5550-5
https://doi.org/10.1007/s11664-017-5550-5
Autor:
Shuichi Noda, Po-Chun Chang, Shih-Chien Liu, Heng-Tung Hsu, Hsiao-Chieh Lo, Edward Yi Chang, Yuen Yee Wong, Yen-Ku Lin, Seiji Samukawa, Chia-Hsun Wu, Quang Ho Luc
Publikováno v:
IEEE Electron Device Letters. 37:1395-1398
The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d99bb662fc08e28a2e0620763b84a6b
https://doi.org/10.1109/led.2016.2609938
https://doi.org/10.1109/led.2016.2609938
Autor:
Edward Yi Chang, Yuen Yee Wong, Sheng Po Chang, Jer-shen Maa, Chih Jen Hsiao, Chun Kuan Liu, Hong Quan Nguyen, Minh Thien Huu Ha, Shoou-Jinn Chang, Hung Wei Yu
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:845-855
Strain-relieved GaSb quantum dots on GaAs can be achieved by either periodic interfacial misfit (IMF) or the conventional Stranski–Krastanov (SK) growth modes by changing the growth parameters. In this study, the Sb interfacial treatment was employ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18fb00821cba90c2c2cba2bf68a75cda
https://doi.org/10.1007/s10854-016-5599-6
https://doi.org/10.1007/s10854-016-5599-6
Autor:
Wei Ching Huang, Edward Yi Chang, Chia Hsun Wu, Kai Wei Chen, Yen Ku Lin, Yuen Yee Wong, Chung Ming Chu, Wei I. Lee
Publikováno v:
Materials Science in Semiconductor Processing. 45:1-8
The effects of different AlN buffer deposition temperatures on the GaN material properties grown on sapphire substrate was investigated. At relatively higher AlN buffer growth temperature, the surface morphology of subsequent grown GaN layer was deco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cf60f861226026429ef8bad89dddca6
https://doi.org/10.1016/j.mssp.2016.01.008
https://doi.org/10.1016/j.mssp.2016.01.008
Autor:
Wei Ching Huang, Chung Ming Chu, Kai Wei Chen, Wei-I Lee, Edward Yi Chang, Chang Fu Dee, Seong Ling Yap, Chi Feng Hsieh, Burhanuddin Yeop Majlis, Yung Yi Tu, Yuen Yee Wong
Publikováno v:
Journal of Electronic Materials. 45:859-866
The influence of low-temperature AlN (LT-AlN) nucleation layer thickness on the material properties of the GaN layer grown on the double-step AlN layer is investigated. When GaN was grown without the LT-AlN nucleation layer, the GaN layer has low she
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2a4f5cde615e82f9a2017ad550e4895
https://doi.org/10.1007/s11664-015-4210-x
https://doi.org/10.1007/s11664-015-4210-x
Publikováno v:
Vacuum. 171:108974
Indium gallium nitride (InGaN) samples were grown on sapphire substrate with low temperature GaN buffer by metalorganic chemical vapor deposition (MOCVD) under varying growth conditions, such as temperature, pressure and ammonia flow. Although high i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62c99a6c7c808bc723324f4945c1dcf3
https://doi.org/10.1016/j.vacuum.2019.108974
https://doi.org/10.1016/j.vacuum.2019.108974