Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Yueh-Ying Tsai"'
Publikováno v:
Quality & Quantity. 52:2495-2513
The blended e-learning system (BELS), combining face-to-face classes with e-learning modules, is now widely used in education. The primary purpose of this research was to investigate the factors affecting nurses’ behavioral intentions of using the
Autor:
Pei-Min Chao, Hsiang-Chun Chen, Hsiang-Yu Lin, Wen-Ling Liao, Wen-Chieh Wu, Yueh-Ying Tsai, Hung-Chih Lin, Li-Na Liao, An-Chyi Chen
Publikováno v:
Nutrients
Volume 12
Issue 2
Nutrients, Vol 12, Iss 2, p 543 (2020)
Volume 12
Issue 2
Nutrients, Vol 12, Iss 2, p 543 (2020)
Our objective was to determine how docosahexaenoic acid (DHA) proportions in human milk are modulated by maternal FADS gene variants and dietary intake in Taiwanese women. Inclusion criteria included being healthy, 20–40 y old, having had a full-te
Publikováno v:
Ferroelectrics. 459:99-104
A Cu/SiO2/Pt structure is used to investigate the retention failure mechanism of the low-resistance-state (LRS) of resistive-switching behavior. Resistance switching is determined by the electrodeposition and dissolution of a Cu-conducting filament w
Autor:
Suh-Hang Hank Juo, Kuo Sheng Hung, Hsin Shih Wang, Wansu Chang, Chung Ling Liang, Yueh Ying Tsai
Publikováno v:
Journal of Human Genetics. 52:374-377
Reduced scleral collagen accumulation has been found in the development of myopia. Single nucleotide polymorphisms (SNPs) at the type I collagen alpha-1 gene (COL1A1) may cause different susceptibilities to myopia. We conducted a case-control study t
Publikováno v:
Journal of Nanomaterials, Vol 2014 (2014)
A 20 nm SiOxlayer is deposited using radio-frequency sputtering to form the resistive switching layer of a Cu/SiOx/Pt memory device. The SiOx-based device demonstrates the resistive switching characteristics with an electrochemical reaction. CF4plasm
Autor:
Yueh-Ying Tsai, I-Ju Liao
Publikováno v:
Journal of Microbiology, Immunology and Infection. 48:S100
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 32:02B111
In this paper, a 20-nm SiOx thin film was deposited on a Pt/Ti/SiO2/Si substrate using radio-frequency magnetron sputtering. A Cu top electrode was deposited to form a Cu/SiOx/Pt device. The device was reversibly switched between a low-resistance sta
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Mar/Apr2014, Vol. 32 Issue 2, p1-5, 5p
Publikováno v:
Journal of Human Genetics; Apr2007, Vol. 52 Issue 4, p374-377, 4p, 1 Chart