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pro vyhledávání: '"Yueh-Ting Hou"'
Autor:
Yueh-Ting Hou, 侯岳廷
107
In recent years, spin-transfer torque random access memory (STT-RAM) has been considered as a potential candidate to replace SRAM in cache design. Compared with SRAM, STT-RAM has advantages of high data density, nearly zero leakage power, an
In recent years, spin-transfer torque random access memory (STT-RAM) has been considered as a potential candidate to replace SRAM in cache design. Compared with SRAM, STT-RAM has advantages of high data density, nearly zero leakage power, an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/menc2k
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 41:2753-2757
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9ff4e92e4606df5acfbbd91548729df
https://doi.org/10.1109/tcad.2021.3112638
https://doi.org/10.1109/tcad.2021.3112638
