Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Yueh-Chien Lee"'
Autor:
Wen-Te Wu, Kwong-Kau Tiong, Shih-Wei Tan, Sheng-Yao Hu, Yueh-Chien Lee, Ruei-San Chen, Chia-Ti Wu
Publikováno v:
Applied Sciences, Vol 14, Iss 15, p 6676 (2024)
We have studied the variations in the temperature-dependent absorption edge of a bulk InSe-layered semiconductor using photoconductivity (PC) measurements. From both the X-ray diffraction (XRD) and Raman experimental results, the structural phase of
Externí odkaz:
https://doaj.org/article/1e811171fcec408fbbb6b012dd1603c3
Autor:
Hemanth Kumar Bangolla, Yueh-Chien Lee, Wei-Chu Shen, Rajesh Kumar Ulaganathan, Raman Sankar, He-Yun Du, Ruei-San Chen
Publikováno v:
Nanomaterials, Vol 13, Iss 15, p 2190 (2023)
We reported the photoconduction properties of tungsten disulfide (WS2) nanoflakes obtained by the mechanical exfoliation method. The photocurrent measurements were carried out using a 532 nm laser source with different illumination powers. The result
Externí odkaz:
https://doaj.org/article/7e947e9dbc9c44f496ab266257a8e6d0
Publikováno v:
Applied Sciences, Vol 12, Iss 15, p 7883 (2022)
We present a series of Sm3+/Tb3+ co-doped CaMoO4 phosphors synthesized by an efficient method of microwave-assisted heating. The prepared CaMoO4 samples were characterized by X-ray diffraction, photoluminescence, and Commission Internationale de l’
Externí odkaz:
https://doaj.org/article/f03efa22d3964fbab29cfef676c424fd
Publikováno v:
Results in Physics, Vol 7, Iss , Pp 4096-4100 (2017)
We present the anisotropic Raman spectra of the Re-doped MoSe2 layered semiconductor with thicker edge plane grown by chemical vapor transport method. The anisotropic lattice dynamics in the doped MoSe2 layered material are investigated by Raman scat
Externí odkaz:
https://doaj.org/article/e797d04a1791447e97747f5b1c52a0b0
Autor:
Yueh-Chien Lee, 李岳謙
96
This study used variational analysis approach, CALMET and MM5 meteorological models, using the wind field data of simulations to discuss the relevance and differences of calculating air mass trajectories in order to understand the transmissio
This study used variational analysis approach, CALMET and MM5 meteorological models, using the wind field data of simulations to discuss the relevance and differences of calculating air mass trajectories in order to understand the transmissio
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/25321525608323020926
Publikováno v:
Journal of Luminescence. 197:248-251
We present the localization effects in orthorhombic phase of CH3NH3PbI3 perovskite materials by temperature-dependent photoluminescence and time-resolved photoluminescence. Our investigations indicate that the tetragonal inclusions in the orthorhombi
Publikováno v:
Journal of Alloys and Compounds. 690:15-20
In this work, CuInS 2 (CIS) nanocrystals are successfully synthesized by microwave-assisted technique and further calcined at several different temperatures with or without additional Ar ambient. The XRD measurements showed that a significant recryst
Publikováno v:
Applied Mechanics and Materials. 851:90-93
In this work, the influence of thermal annealing on the morphologies and optical properties of zinc oxide (ZnO) thin films grown on Si and glass substrate has been investigated by scanning electron microscopy (SEM) and photoluminescence (PL) measurem
Autor:
Wu-Ching Chou, J. L. Shen, Y. S. Huang, S.Y. Hu, Kwong-Kau Tiong, Yueh-Chien Lee, T. Y. Wu, C. C. Chang
Publikováno v:
Solid State Communications. :1-4
We have investigated the luminescence characteristics of Zn 1− x Cd x O thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were me
Autor:
Jyh Wei Lee, Ming Kwen Tsai, Yueh Chien Lee, Ji Lin Shen, Wei Huang, Min-Hung Lee, Sheng Yao Hu
Publikováno v:
Micro & Nano Letters. 11:192-195
The morphology control investigations on ZnO/ZnS core/shell nanorod fabricated by microwave-assisted in-situ surface sulphidation of ZnO nanorod arrays is presented. First, the ZnO nanorod arrays are grown on ZnO/Si substrate by microwave heating of