Zobrazeno 1 - 10
of 160
pro vyhledávání: '"Yueh Chin Lin"'
Autor:
Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang
Publikováno v:
Micro and Nano Engineering, Vol 9, Iss , Pp 100073- (2020)
In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 m
Externí odkaz:
https://doaj.org/article/bacc5b9355274af98d53d38bf366dad1
Autor:
Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang
Publikováno v:
AIP Advances, Vol 7, Iss 8, Pp 085208-085208-6 (2017)
The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (
Externí odkaz:
https://doaj.org/article/3262fc6026cc426bb8e1522f86a41a17
Publikováno v:
International Journal of Photoenergy, Vol 2017 (2017)
In this study, the efficiency of the multicrystalline was improved by inserting a two-step growth thermal oxide layer as the surface passivation layer. Two-step thermal oxidation process can reduce carrier recombination at the surface and improve cel
Externí odkaz:
https://doaj.org/article/5ca367baf3fa407ea8971415398f8719
Autor:
Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 268-274 (2024)
In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of $6.0 ~\mu \text{m}$ as int
Externí odkaz:
https://doaj.org/article/82a72b4f519240c1b0f2654aa4860ff0
Autor:
Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Cheng-Hsien Yu, Yi-Fan Tsao, Pin Su, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 744-751 (2023)
In this research, $\Gamma $ -gated AlGaN/GaN HEMTs with different layout designs and heights of gate stems were fabricated to investigate their impacts on the noise performance in the Ka-band. First, devices with 4 types of gate peripheries were prep
Externí odkaz:
https://doaj.org/article/243c09fae0f740d8b4ca35d1e15fefa8
Autor:
Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 311-318 (2023)
This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small gate length (LG) of 100 nm was achieved through a 2-Step Photolithography Process and the
Externí odkaz:
https://doaj.org/article/b7f1cea37d184f1899a1447628478196
Autor:
Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Yi-Fan Tsao, Chang-Fu Dee, Pin Su, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 36-42 (2023)
In this letter, AlGaN/GaN HEMTs with tall-gate-stem structures were realized to improve the power performance of Ka-band devices, and a film thinning process is adopted in the fabrication process to reduce the parasitic capacitance caused by the thic
Externí odkaz:
https://doaj.org/article/0ad9e3ccda2244a5b4f83ff431402a2f
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 071001 (2024)
In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance ( R _c ) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μ
Externí odkaz:
https://doaj.org/article/6e7194366c79490fb40abefb7ca7e291
Publikováno v:
Micromachines, Vol 15, Iss 1, p 81 (2023)
In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported. The fabricated AlGaN/GaN HEMTs with OEP
Externí odkaz:
https://doaj.org/article/40e4213e566641119fd13c2cee703e68
Publikováno v:
Micromachines, Vol 14, Iss 5, p 931 (2023)
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and
Externí odkaz:
https://doaj.org/article/dc92d7ce12644a8599b64e821e7eb14e