Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Yueguo Hu"'
Autor:
Minhui Ji, Jiayuan Wang, Liyuan Yang, Xinmiao Zhang, Yueguo Hu, Qingfa Du, Jiafei Hu, Weicheng Qiu, Junping Peng, Xiaowen Chen, Yanxiang Luo, Bin Fang, Peisen Li, Mengchun Pan
Publikováno v:
Advanced Intelligent Systems, Vol 6, Iss 6, Pp n/a-n/a (2024)
In‐sensor computing architecture has a great advantage especially in massive data sampling, transfer, and processing compared with the separated intelligent sensor systems. However, most of the in‐sensor computing device is proposed based on the
Externí odkaz:
https://doaj.org/article/4ba3312610ac45b695970231ff1dad33
Autor:
Kun Sun, Lan Yang, Peisen Li, Jun Tao, Xinmiao Zhang, Minhui Ji, Junping Peng, Mengchun Pan, Dixiang Chen, Jiafei Hu, Weicheng Qiu, Qi Zhang, Yueguo Hu
Publikováno v:
AIP Advances, Vol 12, Iss 10, Pp 105003-105003-9 (2022)
A highly sensitive superconductor/tunnel magnetoresistance (TMR) composite magnetic sensor was designed and fabricated to satisfy the demands of detecting weak magnetic fields down to the pT range at low frequencies. First, analysis of the 1/f noise
Externí odkaz:
https://doaj.org/article/c51621084c5241649cf555a9a1fa83af
Autor:
Lan Yang, Mengchun Pan, Kun Sun, Xinmiao Zhang, Peisen Li, Yueguo Hu, Jiafei Hu, Jun Tao, Minhui Ji, Weicheng Qiu, Dixiang Chen, Qi Zhang, Junping Peng
Publikováno v:
AIP Advances, Vol 12, Iss 9, Pp 095208-095208-7 (2022)
A superconductor/magnetoresistance (SC/MR) mixed sensor often has very high-precision detection capability, but it is only sensitive to the out-of-plane magnetic field that is perpendicular to the superconducting flux-to-field transformation amplifie
Externí odkaz:
https://doaj.org/article/ce9ebf3c065d4ef2a6b147bbe477cec0
Autor:
Chengxiu Yang, Jiafei Hu, Shaowei Wu, Mengchun Pan, Peisen Li, Qingfa Du, Junping Peng, Weicheng Qiu, Yueguo Hu, Qi Zhang, Pengteng Chen, Haomiao Wang
Publikováno v:
ACS Applied Materials & Interfaces. 15:20421-20434
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b399ca541c79aaf91b6dfef6d276a926
https://doi.org/10.1021/acsami.3c01782
https://doi.org/10.1021/acsami.3c01782
Autor:
Weicheng Qiu, Yanrui Guo, Qi Zhang, Jiafei Hu, Junping Peng, Yueguo Hu, Dixiang Chen, Chengxiu Yang, Peisen Li, Mengchun Pan
Publikováno v:
ACS Applied Nano Materials. 6:4236-4242
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::647b1706996247e3688644caf90a8296
https://doi.org/10.1021/acsanm.2c05320
https://doi.org/10.1021/acsanm.2c05320
Autor:
Weicheng Qiu, Yanrui Guo, Ruinan Wu, Peisen Li, Jiafei Hu, Junping Peng, Yueguo Hu, Chengxiu Yang, Mengchun Pan
Publikováno v:
ACS Applied Electronic Materials. 5:1592-1599
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c6f20bca39935ae75f9b25cf3fec769
https://doi.org/10.1021/acsaelm.2c01638
https://doi.org/10.1021/acsaelm.2c01638
Autor:
Lan Yang, Kun Sun, Mengchun Pan, Xinmiao Zhang, Junping Peng, Yueguo Hu, Jiafei Hu, Weicheng Qiu, Peisen Li
Publikováno v:
IEEE Sensors Journal. 23:240-246
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b429e25d396af04fcaf17e5dd1d0c33c
https://doi.org/10.1109/jsen.2022.3221721
https://doi.org/10.1109/jsen.2022.3221721
Autor:
Yulu Che, Jiafei Hu, Long Pan, Peisen Li, Mengchun Pan, Dixiang Chen, Kun Sun, Xinmiao Zhang, Qingfa Du, Yang Yu, Yueguo Hu, Minhui Ji, Lan Yang, Junping Peng, Weicheng Qiu, Qi Zhang
Publikováno v:
AIP Advances, Vol 10, Iss 10, Pp 105032-105032-6 (2020)
Owing to the attractive advantages of the simple preparation process, convenient frequency adjustment, and stable mechanical structure, magnetic flux modulation with electric controlled permeability exhibits a better performance in the reduction of 1
Externí odkaz:
https://doaj.org/article/47eaabfe225c4887809ee5f120056718
Autor:
Ruinan Wu, Yueguo Hu, Peisen Li, Junping Peng, Jiafei Hu, Ming Yang, Dixiang Chen, Yanrui Guo, Qi Zhang, Xiangnan Xie, Jiayu Dai, Weicheng Qiu, Guang Wang, Mengchun Pan
Publikováno v:
Nanomaterials, Vol 11, Iss 11, p 3112 (2021)
The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (
Externí odkaz:
https://doaj.org/article/1adcf387c0b64f7bb9770716f285b698
Autor:
MinHui Ji, Long Pan, Yueguo Hu, Mengchun Pan, Lan Yang, Junping Peng, Weicheng Qiu, Jiafei Hu, Qi Zhang, Peisen Li
Publikováno v:
AIP Advances, Vol 9, Iss 8, Pp 085317-085317-6 (2019)
Magnetic tunnel junction (MTJ) as a key spintronics device can be used for the high-sensitivity magnetic field sensor and high-density non-volatile magnetic random access memory (MRAM). To obtain a high tunneling magnetoresistance (TMR), precise cont
Externí odkaz:
https://doaj.org/article/178d1337f58b44f4a43c2ec7c14eda9f