Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Yuefei Cai"'
Autor:
Chien-Chung Lin, Yuh-Renn Wu, Hao-Chung Kuo, Matthew S Wong, Steven P DenBaars, Shuji Nakamura, Ayush Pandey, Zetian Mi, Pengfei Tian, Kazuhiro Ohkawa, Daisuke Iida, Tao Wang, Yuefei Cai, Jie Bai, Zhiyong Yang, Yizhou Qian, Shin-Tson Wu, Jung Han, Chen Chen, Zhaojun Liu, Byung-Ryool Hyun, Jae-Hyun Kim, Bongkyun Jang, Hyeon-Don Kim, Hak-Joo Lee, Ying-Tsang Liu, Yu-Hung Lai, Yun-Li Li, Wanqing Meng, Haoliang Shen, Bin Liu, Xinran Wang, Kai-ling Liang, Cheng-Jhih Luo, Yen-Hsiang Fang
Publikováno v:
JPhys Photonics, Vol 5, Iss 4, p 042502 (2023)
Micro light-emitting diode (micro-LED) will play an important role in the future generation of smart displays. They are found very attractive in many applications, such as maskless lithography, biosensor, augmented reality (AR)/mixed reality etc, at
Externí odkaz:
https://doaj.org/article/d16ccf6f2d934acb89be0d4c025e8910
Autor:
Yuefei Cai, Yipin Gong, Jie Bai, Xiang Yu, Chenqi Zhu, Volkan Esendag, Kean Boon Lee, Tao Wang
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 5, Pp 1-7 (2018)
This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by a ring-shaped LED and two devices are seamlessly interconnected by the LED's n-
Externí odkaz:
https://doaj.org/article/692c7bbe80494b2199608d455b979139
Publikováno v:
Materials, Vol 11, Iss 10, p 1968 (2018)
We have designed and then grown a simple structure for high electron mobility transistors (HEMTs) on silicon, where as usual two transitional layers of AlxGa1−xN (x = 0.35, x = 0.17) have been used in order to engineer the induced strain as a resul
Externí odkaz:
https://doaj.org/article/a8b2af0014f146c6a198290286a7b5a0
Publikováno v:
ACS Applied Electronic Materials. 3:4236-4242
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48f431e49f37a3c5b99a9bfe6cab6c7c
https://doi.org/10.1021/acsaelm.1c00677
https://doi.org/10.1021/acsaelm.1c00677
Autor:
Hua Bao, Yuefei Cai, Ran Cao, Xue Shen Wu, Lu Zhang, Ping Yang, Liming Peng, Lingling Yang, Yang Shao, Weijun Zhang, Dongqin Zhu
Publikováno v:
OncoTargets and therapy
Background Drug resistance caused by G1202R/G1202del mutation in anaplastic lymphoma kinase (ALK) represents a great challenge in the clinic. The effect of other mutation(s) at G1202 on the available tyrosine kinase inhibitors (TKIs) in the clinic re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10b93b9f29f57b75c5f8328bb1968fed
https://doi.org/10.2147/ott.s293901
https://doi.org/10.2147/ott.s293901
Publikováno v:
ACS Applied Electronic Materials
Visible light communications (VLC) require III-nitride visible micro-light-emitting diodes (μLEDs) with a high-modulation bandwidth. Such μLEDs need to be driven at a high injection current density on a kA/cm2 scale, which is about 2 orders of magn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf8f856c6bad8f0bd42259a00fab139c
https://doi.org/10.1021/acsaelm.0c00985
https://doi.org/10.1021/acsaelm.0c00985
Publikováno v:
ACS Applied Electronic Materials
Visible light communication requires III-nitride LEDs with a high modulation bandwidth but have c-plane limitations. General illumination requires green/yellow III-nitride LEDs with high optical efficiency that are difficult to achieve on c-plane sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfecd4cafc6a83915d3dc557d45656ff
http://europepmc.org/articles/PMC7461145
http://europepmc.org/articles/PMC7461145
Publikováno v:
ACS Photonics
A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs) has been developed, leading to the demonstration of ultrasmall, ultraefficient, and ultracompact green μLEDs with a dimension of 3.6 μm a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a3cdd53ff555942699bf45c9970b52e
https://doi.org/10.1021/acsphotonics.9b01351
https://doi.org/10.1021/acsphotonics.9b01351
Publikováno v:
Chinese Physics B. 32:018508
There is a significantly increasing demand of developing augmented reality and virtual reality (AR and VR) devices, where micro-LEDs (μLEDs) with a dimension of ≤ 5 μm are the key elements. Typically, μLEDs are fabricated by dry-etching technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc589b8c90f51e9e4b690838f037427
https://doi.org/10.1088/1674-1056/ac90b5
https://doi.org/10.1088/1674-1056/ac90b5
Publikováno v:
Journal of Physics D: Applied Physics. 55:375102
Localized surface plasmons (LSPs) have a wide range of applications in enhancing the performance of optoelectronic devices. For those applications, LSPs are often located on the surfaces or interfaces between dielectric mediums. Hence, it is necessar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf97f6851b76d6b484fc05c65398921a
https://doi.org/10.1088/1361-6463/ac7985
https://doi.org/10.1088/1361-6463/ac7985