Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Yuebo Liu"'
Autor:
Xiuli Wang, Qiyuan Zhou, Wen Yang, Hui Bi, Honghui Wang, Yacan Wang, Yadong Du, Lin Liu, Yuebo Liu, Liefen Yin, Jin Yao, Jingxing Yu, Wei Tao, Yongchun Zhou, Zeping Zhou
Publikováno v:
Hematology, Vol 29, Iss 1 (2024)
Background CD83 are closely related to the pathogenesis of immune thrombocytopenia (ITP), but the exact mechanism remains unclear.Aim To explore the relationship between CD83 and CD4+ T cell subsets and clarify the role of CD83 in the pathogenesis of
Externí odkaz:
https://doaj.org/article/5bfe3cf7066540f4befc463c2904532a
Autor:
Xiuli Wang, Hui Bi, Lin Liu, Yuebo Liu, Liefen Yin, Jin Yao, Jingxing Yu, Wei Tao, Yueping Wei, Yu Li, Lingmei Yin, Hongli Mu, Yadong Du, Zeping Zhou
Publikováno v:
Platelets, Vol 34, Iss 1 (2023)
AbstractThe conventional dose of recombinant human thrombopoietin (rhTPO) in the treatment of immune thrombocytopenia (ITP) is 300 U/kg per day, but the clinical reaction rate is not satisfactory. Accordingly, we explored the efficacy and safety of i
Externí odkaz:
https://doaj.org/article/f07a296c415546b3a6d4a0c23bf3e3be
Autor:
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao
Publikováno v:
Micromachines, Vol 15, Iss 1, p 156 (2024)
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN hetero
Externí odkaz:
https://doaj.org/article/7b55b01bc6b44340a22ab07378203714
Autor:
Zhihao Zhao, Linglin Zhou, Shaoxin Li, Di Liu, Yanhong Li, Yikui Gao, Yuebo Liu, Yejing Dai, Jie Wang, Zhong Lin Wang
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Appropriate triboelectric material selection is vital to for high performance direct current triboelectric nanogenerator (DC-TENG). The authors here provide effective selection rules as guideline to select triboelectric materials for DC-TENG to reduc
Externí odkaz:
https://doaj.org/article/d7bf23a40d434b12bbd4ac48772f2898
Autor:
Honghui Liu, Zhiwen Liang, Chaokun Yan, Yuebo Liu, Fengge Wang, Yanyan Xu, Junyu Shen, Zhengwen Xiao, Zhisheng Wu, Yang Liu, Qi Wang, Xinqiang Wang, Baijun Zhang
Publikováno v:
Advances in Condensed Matter Physics, Vol 2022 (2022)
The AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reve
Externí odkaz:
https://doaj.org/article/8a7540ba4a134154bbf1eea43d91018f
Autor:
Junyu Shen, Yanyan Xu, Zhengwen Xiao, Yuebo Liu, Honghui Liu, Fengge Wang, Chaokun Yan, Liyang Wang, Changhao Chen, Zhisheng Wu, Yang Liu, Peng Un Mak, Mang I. Vai, Sio Hang Pun, Tim C. Lei, Baijun Zhang
Publikováno v:
Micromachines, Vol 13, Iss 11, p 1836 (2022)
Optrodes, which are single shaft neural probes integrated with microelectrodes and optical light sources, offer a remarkable opportunity to simultaneously record and modulate neural activities using light within an animal’s brain; however, a common
Externí odkaz:
https://doaj.org/article/81f07e851fb44d97801e398b2fc16469
Autor:
Honghui Liu, Zhiwen Liang, Jin Meng, Yuebo Liu, Hongyue Wang, Chaokun Yan, Zhisheng Wu, Yang Liu, Dehai Zhang, Xinqiang Wang, Baijun Zhang
Publikováno v:
Micromachines, Vol 13, Iss 8, p 1172 (2022)
Traditional GaAs-based frequency multipliers still exhibit great challenges to meet the demand for solid-state high-power THz sources due to low breakdown voltage and heat dissipation of the Schottky barrier diode (SBD). In this study, a GaN SBD chai
Externí odkaz:
https://doaj.org/article/279ee1141367415ca9b76cc4be0a4233
Autor:
Wenyuan Liao, Rui Gao, Yuebo Liu, Jide Zhang, Shuwang Li, Hao Niu, Shaohua Yang, Canxiong Lai
Publikováno v:
Applied Sciences, Vol 12, Iss 11, p 5532 (2022)
The long-term reliability of the commercially available vertical-cavity surface-emitting laser (VCSEL) at 1310 nm wavelength is investigated. To do so, a high current accelerated life test is used to evaluate the 1310 nm VCSEL reliability. Variations
Externí odkaz:
https://doaj.org/article/0b55af55313c485baa8cdc6149dc3320
Autor:
Yuebo Liu, Honghui Liu, Hang Yang, Wanqing Yao, Fengge Wang, Yuan Ren, Junyu Shen, Minjie Zhang, Zhisheng Wu, Yang Liu, Baijun Zhang
Publikováno v:
Advances in Condensed Matter Physics, Vol 2021 (2021)
Micropyramid vertical GaN-based ultraviolet (UV) light-emitting diodes (LEDs) on Si(111) substrate have been fabricated by selective area growth to reduce threading dislocations and the polarization effects. There is no-light emission at the bottom a
Externí odkaz:
https://doaj.org/article/259892a229874a9dadb8f9b21c77153c
Autor:
Longkun Yang, Wanqing Yao, Yuebo Liu, Linglong Wang, Yaqiong Dai, Honghui Liu, Fengge Wang, Yuan Ren, Zhisheng Wu, Yang Liu, Baijun Zhang
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045219-045219-5 (2020)
The capacitance and the series resistance are two main factors which determine the cut-off frequency of Schottky barrier diodes (SBDs) for their application in millimeter-wave and terahertz regions. The junction capacitance is closely related to the
Externí odkaz:
https://doaj.org/article/8f5cbeae196d4221a708a6129ab7755d