Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Yue-Huei Wu"'
Autor:
Wei-Chou Hsu, Yu-Shyan Lin, Dong-Hai Huang, Rong-Tay Hsu, Yue-Huei Wu, Yin-Kai Liao, Juin-Chin Huang
Publikováno v:
Semiconductor Science and Technology. 21:781-785
InP-based InAlAs/InxGa1?xAs/InP high-electron-mobility transistors (HEMTs) with a symmetrically graded channel (SGC-HEMT) and an inversely graded channel (IGC-HEMT) were fabricated and studied. The SGC-HEMT exhibits better Hall, dc and RF characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae646248ecd1c7a63d272741fb992250
https://doi.org/10.1088/0268-1242/21/6/012
https://doi.org/10.1088/0268-1242/21/6/012
Publikováno v:
Solid-State Electronics. 49:163-166
High-linearity In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b7cd0a9f42acea9bec9b27a3fcbb5e4
https://doi.org/10.1016/j.sse.2004.08.003
https://doi.org/10.1016/j.sse.2004.08.003
Publikováno v:
Solid-State Electronics. 48:119-124
High-linearity In0.52Al0.48As/InxGa1−xAs HEMT’s have been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The studied devices exhibit high transconductance, low leakage current, high breakdown, and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ecc248adc7fb0d3f06a02f56b72d26
https://doi.org/10.1016/s0038-1101(03)00287-9
https://doi.org/10.1016/s0038-1101(03)00287-9
Publikováno v:
Japanese Journal of Applied Physics. 42:4249-4252
Planar InGaAs(P)/InP p–i–n photodiodes have been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). High-quality and uniform epitaxial layers are obtained. It is noted that the InGaAs layer background conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2df09a1c71c494a7864d6217aa3bd338
https://doi.org/10.1143/jjap.42.4249
https://doi.org/10.1143/jjap.42.4249
Publikováno v:
Superlattices and Microstructures. 24:175-180
Zinc delta-doped GaAs and pseudomorphic GaAs/In} 0.2 Ga 0.8 As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a429b78aa0269b73ba37f8a303afdca
https://doi.org/10.1006/spmi.1996.0153
https://doi.org/10.1006/spmi.1996.0153
Publikováno v:
IEEE Transactions on Electron Devices. 43:1181-1186
GaAs field-effect transistors (FET's) utilizing multiple /spl delta/-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-/spl delta/-doping profiles were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c1376953065884dfa317ec9ddd87d6
https://doi.org/10.1109/16.506766
https://doi.org/10.1109/16.506766
Publikováno v:
IEEE Transactions on Electron Devices. 40:1630-1635
Significant improvements in gate voltage swings in heterostructures prepared by low-pressure metalorganic chemical vapor deposition are discussed. Structures utilizing a compositionally graded In/sub x/Ga/sub 1-x/As channel exhibited a very flat tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6a5dad2d5612d03849a3f533e4ec93e
https://doi.org/10.1109/16.231568
https://doi.org/10.1109/16.231568
Publikováno v:
Solid-State Electronics. 38:1755-1757
We report qualitatively a lattice-matched In 0.53 Al 0.22 Ga 0.25 As InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The In 0.53 Al 0.22 Ga 0.25 As InP heterostructure has a large valence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dafb55486ca20a57a43bd3234c505fe
https://doi.org/10.1016/0038-1101(94)00300-5
https://doi.org/10.1016/0038-1101(94)00300-5
Publikováno v:
Solid-State Electronics. 38:767-769
We have successfully fabricated InGaAs/InP double and single heterostructure-emitter bipolar transistors. The double and single HEBTs exhibit common-emitter current gain of 120 and 41 along with offset voltage of 45 and 50 mV, respectively. These pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b1b9b764efb98b8fdda5541587baff5
https://doi.org/10.1016/0038-1101(94)00176-g
https://doi.org/10.1016/0038-1101(94)00176-g
Publikováno v:
Thin Solid Films. 245:164-166
An In 0.9 Ga 0.1 P/In 0.75 Ga 0.53 Ga 0.47 As/InP heterostructure grown by low-prssure metal-organic chemical vapor deposition exhibits a mobility as high as 7910 cm 2 V −1 s −1 with a two-dimensional electron gas (2DEG) concentration of 3.35 ×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c0f0c245d7d9ce8c78c7db4f0cd36f
https://doi.org/10.1016/0040-6090(94)90893-1
https://doi.org/10.1016/0040-6090(94)90893-1