Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Yue-Gie Liaw"'
Autor:
Deshi Li, Chii-Wen Chen, Wen-Shiang Liao, Haoshuang Gu, Mu-Chun Wang, Xuecheng Zou, Yue-Gie Liaw
Publikováno v:
Semiconductors. 51:1650-1655
The length of Source/Drain (S/D) extension (LSDE) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer LSDEpFinFET provides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c355f44b8729e1533184789481b715
https://doi.org/10.1134/s1063782617120120
https://doi.org/10.1134/s1063782617120120
Autor:
Cheng-Li Lin, Mu-Chun Wang, Haoshuang Gu, Bin Zhou, Deshi Li, Xuecheng Zou, Wen-Shiang Liao, Yue-Gie Liaw
Publikováno v:
Solid-State Electronics. 126:46-50
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio (Height/Width = 82.9 nm/8.6 nm) have been developed after integrating a 14 A nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edf7aa154495e678aba562e452530fbf
https://doi.org/10.1016/j.sse.2016.09.017
https://doi.org/10.1016/j.sse.2016.09.017
Publikováno v:
Modern Physics Letters B. 32:1850157
Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089f6448e8546ff849d0e2dd92fe0654
https://doi.org/10.1142/s0217984918501579
https://doi.org/10.1142/s0217984918501579
Autor:
Xuecheng Zou, Haoshuang Gu, Deshi Li, Chii-Wen Chen, Mu-Chun Wang, Wen-Shiang Liao, Yue-Gie Liaw
Publikováno v:
Физика и техника полупроводников. 51:1706
The length of Source/Drain (S/D) extension (LSDE) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer LSDE pFinFET provides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccd7f4f831833d565b02b8dac7741e41
https://doi.org/10.21883/ftp.2017.12.45190.8421
https://doi.org/10.21883/ftp.2017.12.45190.8421
Autor:
Lee Chung, Tommy Shih, Mao-Chyuan Tang, Chee-Wee Liu, Huan-Chiu Tsen, Yue-Gie Liaw, Sheng-Yi Huang, Wen-Shiang Liao, Kun-Ming Chen
Publikováno v:
Japanese Journal of Applied Physics. 47:3127-3129
It is demonstrated that the appropriate external mechanical stress applied by the conventional IC chip's package straining can enhance device and circuit performance. A drain current enhancement of 4.9% at saturation is observed for 90-nm-node n-chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f38bf40094e07c3e2862cd15db5ad8fb
https://doi.org/10.1143/jjap.47.3127
https://doi.org/10.1143/jjap.47.3127
Autor:
Kun-Ming Chen, Chee-Wee Liu, Sheng-Yi Huang, Mao-Chyuan Tang, Wen-Shiang Liao, Yue-Gie Liaw, Cheng-Yi Peng
Publikováno v:
IEEE Electron Device Letters. 29:86-88
In this letter, the SiGe-channel PMOS transistors integrated with a highly compressive contact-etching stop-layer (CESL) interlayer-dielectric-SiNx stressing layer have been successfully fabricated. The performance improvements of devices with a gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a85c4d7aadae188168813e259250b91
https://doi.org/10.1109/led.2007.910794
https://doi.org/10.1109/led.2007.910794
Autor:
Tung-Hung Chen, Hsin-Hung Lin, Mao-Chyuan Tang, Yu-Huan Liu, Sheng-Yi Huang, Yue-Gie Liaw, Tommy Shih, Kun-Ming Chen, Cheng-Han Wu, Wen-Shiang Liao
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
As the IC product scribe line of logic 90nm (L90) technology shrinks from 80µm to 62μm, the wafer quality (W.Q.), will become weak and less distinguishable during the subsequent ASML scanner stepper's photo mask aligning. Many wafers having photo m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dcc8a01921e6f5271b9cac1225415d1
https://doi.org/10.1117/12.772286
https://doi.org/10.1117/12.772286
Autor:
Tung-Hung Chen, Lee Chung, Sheng-Yi Huang, Tommy Shih, Kun-Ming Chen, Mao-Chyuan Tang, Yue-Gie Liaw, Cheng-Han Wu, Wen-Shiang Liao, Huan-Chiu Tsen
Publikováno v:
SPIE Proceedings.
A vertical double gate MOSFET (FinFET) device with an ultra-small poly-Si gate of 30nm and promising device performances has been successfully developed after integrating a 14a nitrided gate oxide on silicon-on-insulator (SOI) wafers. First, a 500a-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6724650e76ccc6a03fcaf7db288b2176
https://doi.org/10.1117/12.769591
https://doi.org/10.1117/12.769591
Autor:
Hao-Hao Wang, Hsin-Chia Yang, Haoshuang Gu, Szu-Hung Chen, Wen-Shiang Liao, Mu-Chun Wang, Yue-Gie Liaw, Shea-Jue Wang
Publikováno v:
Nanoscale Research Letters
A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26b8874aff1cf400615cb428b0f4f00c
http://europepmc.org/articles/PMC3466142
http://europepmc.org/articles/PMC3466142
Autor:
Haoshuang Gu, Kun-Ming Chen, Mu-Chun Wang, Yue-Gie Liaw, Cong Ye, Hao Wang, Di Zhou, Szu-Hung Chen, Yongming Hu, Wen-Shiang Liao, Wenfeng Wang
Publikováno v:
Applied Physics Letters. 99:173505
A high-aspect-ratio 3D multi-gate n-channel fin-shaped field effect transistor (FinFET) has been integrated with a stressor of a highly tensile nitride film as the initial inter layer dielectric capping layer upon a (110)-orientated silicon-on-insula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eed859a16a11a9970c440441aaff153
https://doi.org/10.1063/1.3657137
https://doi.org/10.1063/1.3657137