Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yue-Chin Lin"'
Publikováno v:
International Journal of Heat and Mass Transfer. 55:864-873
An experiment is carried out here to investigate the transient oscillatory boiling heat transfer and associated bubble characteristics of FC-72 flow over a small circular plate subject to a time varying heat flux with the plate flush mounted on the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b1a30781c83a4b755e2727715ec99d
https://doi.org/10.1016/j.ijheatmasstransfer.2011.10.022
https://doi.org/10.1016/j.ijheatmasstransfer.2011.10.022
Autor:
Chang Fu Dee, Yue-Chin Lin, Yuen Yee Wong, Hai Dang Trinh, S.P. Wang, Chi-Lang Nguyen, Quang Ho Luc, Binh Tinh Tran, Hong Quan Nguyen, Edward Yi Chang
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al 2 O 3 /InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dda44523d8e4bf480d083abb9be7859
https://doi.org/10.1109/smelec.2012.6417251
https://doi.org/10.1109/smelec.2012.6417251
Autor:
Yuen Yee Wong, Yu Sheng Chiu, Yue-Chin Lin, Edward Yi Chang, Tai Ming Lin, Tien Tung Luong, Yen Teng Ho
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
AlGaN/GaN high electron mobility transistor (HEMT) was grown on silicon carbide substrate by metalorganic chemical vapor deposition technique. The AlGaN/GaN structure was optimized by tuning the growth conditions such as AlN buffer thickness, and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab48d2a32e140f07c96924a0abf4b76
https://doi.org/10.1109/smelec.2012.6417246
https://doi.org/10.1109/smelec.2012.6417246