Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yue Shuang-Lin"'
Publikováno v:
Chinese Physics Letters. 23:678-681
By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si (100) substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained Ni
Publikováno v:
Chinese Physics Letters. 20:1329-1332
Synthesis and growth properties of the TiSi2 film on a Si (001) substrate are investigated. A novel two-step method is used for deposition of the C54 phase TiSi2 film with low resistivity. The first step is the formation of the C49 phase TiSi2 at a r
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; March 2007, Vol. 121 Issue: 1 p797-800, 4p
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; March 2007, Vol. 121 Issue: 1 p777-780, 4p
Publikováno v:
Materials Science Forum; January 2005, Vol. 475 Issue: 1 p559-562, 4p
Publikováno v:
Materials Science Forum; January 2005, Vol. 475 Issue: 1 p3591-3594, 4p
Autor:
Jin Ai-Zi, Wang Kaige, Wang Pengye, Gu Chang-Zhi, Liu Wen-Qing, Yue Shuang-Lin, Wang Hong, Niu Hanben
Publikováno v:
Scopus-Elsevier
In the emerging field of nanobiotechnology, further downsizing the fluidic channels to the nanometer scale is attractive for both fundamental studies and technical applications. The insulation Silicon nitride membrane nanofluidic channel array which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::187bbaa3bbf82b2c2b47f24a30ce1d06
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http://www.scopus.com/inward/record.url?eid=2-s2.0-33846912020&partnerID=MN8TOARS