Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Yue Min Wan"'
Autor:
Heng-Tien Lin, Yue-Min Wan
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports
Scientific Reports
Study on single electron tunnel using current-voltage characteristics in nanopillar transistors at 298 K show that the mapping between the Nth electron excited in the central box ∼8.5 × 8.5 × 3 nm3 and the Nth tunnel peak is not in the one-to-one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5e23c6a789f4f3abd411021c35304da
http://link.springer.com/article/10.1038/s41598-019-56256-7
http://link.springer.com/article/10.1038/s41598-019-56256-7
Autor:
Te Chien Wang, Yue-Min Wan
Publikováno v:
Chinese Journal of Physics. 55:1225-1229
A study of electron transport in nanopillar transistors at 300 K shows that elastic vibration is an intrinsic behavior of the device. The frequency observed in the drain-source current is found to agree with that of the charging pulsed voltages. Give
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7f70477d51ef71c7e29eab8c58bb524
https://doi.org/10.1016/j.cjph.2017.05.030
https://doi.org/10.1016/j.cjph.2017.05.030
Autor:
Te Chien Wang, Yue Min Wan
Publikováno v:
Global Journal of Engineering Sciences. 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9228a427ec139022880ccd79a2912786
https://doi.org/10.33552/gjes.2019.02.000543
https://doi.org/10.33552/gjes.2019.02.000543
Autor:
Yue-Min Wan, Te Chien Wang
Publikováno v:
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC).
Study of electron transport in nanopillar transistor at 300K shows that elastic vibration is an intrinsic behavior of the device. The frequency observed in the drain-source current is found to agree with the charging frequency. Given a quantum dot of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d584462ec784cc5aa086252aec19ba0
https://doi.org/10.1109/edssc.2017.8126406
https://doi.org/10.1109/edssc.2017.8126406
Publikováno v:
Key Engineering Materials. 573:1-7
In this paper, micro interfacial behavior for Sn3.5Ag0.5Cu (SAC305) lead-free solder on Cu-Ni-Au substrate has been carefully investigated. It is observed that the intermetallic compound (IMC) ingredients along the SAC305 solder on the Cu-Ni-Ag subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231ee3de23ef7abd9e36529886cdc403
https://doi.org/10.4028/www.scientific.net/kem.573.1
https://doi.org/10.4028/www.scientific.net/kem.573.1
Publikováno v:
Advanced Materials Research. :929-934
An electro-thermo coupling finite element model is developed to investigate the electromigration and electro-thermo-mechanical effects on electronic packaging. Sn4.0Ag0.6Cu (SAC405) solder ball are commonly used on POP package in this research. Curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::495343c188d80e87574b09749ca8660d
https://doi.org/10.4028/www.scientific.net/amr.126-128.929
https://doi.org/10.4028/www.scientific.net/amr.126-128.929
Autor:
Yue-Min Wan1 ymwan@isu.edu.tw, Kuo-Dong Huang2,3 kdhuang@nsysu.edu.tw, Shu-Fen Hu4,5 sfhu@ndl.gov.tw, Chin Lung Sun4 clsun@ndl.gov.tw
Publikováno v:
World Congress on Engineering 2009 (Volume 1). 2009, p397-399. 3p. 2 Diagrams, 3 Graphs.
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 7:518-520
We reports observation of giant switching currents in nanopillar transistors at 300 K. It is found that these signals represent mechanical vibration due to the interaction of charging electron and the elastic materials of silicon and silicon nitride.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e54e2875cd95d96cd62c09951be01ad5
https://doi.org/10.1380/ejssnt.2009.518
https://doi.org/10.1380/ejssnt.2009.518
Publikováno v:
Applied Physics Letters. 85:3893-3895
In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aee5675e5310863081b9d4852528719
https://doi.org/10.1063/1.1811803
https://doi.org/10.1063/1.1811803
Publikováno v:
2010 11th International Conference on Electronic Packaging Technology & High Density Packaging.
An electro-thermo coupling finite element model for lead free Sn4.0Ag0.5Cu (SAC405) solder ball is developed to investigate the electromigration and electro-thermo-mechanical effects on electronic packaging in the present paper. SAC405 alloy solder b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0325625da55ca1df91e3051e0e9ba15
https://doi.org/10.1109/icept.2010.5582842
https://doi.org/10.1109/icept.2010.5582842