Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yubin Mo"'
Publikováno v:
Energy Reports, Vol 8, Iss , Pp 710-720 (2022)
As a current driven power device, SiC BJT needs effective driving scheme, but the present schemes are either complicated or not parameter optimized. In this paper we give an optimized parameter design method based on dual power supply RC driving circ
Externí odkaz:
https://doaj.org/article/48b559450bc440e4b2483f113b467b5a
Publikováno v:
Energy Reports, Vol 8, Iss , Pp 1383-1390 (2022)
Silicon Carbide (SiC) MOSFET devices have smaller chip size and higher current density than Si counterparts, which results in the limited short-circuit capability of SiC power modules. The presently used protection circuit is actually conventional de
Externí odkaz:
https://doaj.org/article/8fad35420b8c44c99eed2ec886b46e03
Publikováno v:
Electronics
Volume 8
Issue 8
Electronics, Vol 8, Iss 8, p 837 (2019)
Volume 8
Issue 8
Electronics, Vol 8, Iss 8, p 837 (2019)
Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15efb66d842ede388fb22b4aaead5b97