Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Yuanzhi, Ma"'
Publikováno v:
Borsa Istanbul Review, Vol 22, Iss , Pp S157-S168 (2022)
The purpose of this article is to determine whether the ESG (environmental, social, and governance) performance by Chinese listed companies affects their financing constraints. Based on panel data on 3400 listed companies in China from 2013 to 2020,
Externí odkaz:
https://doaj.org/article/1a9a216b76e14d55a5374d386ae28f49
Publikováno v:
IEEE Transactions on Intelligent Vehicles. 8:2426-2436
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8164feab09cee3375acad1b742be922
https://doi.org/10.1109/tiv.2022.3216102
https://doi.org/10.1109/tiv.2022.3216102
Publikováno v:
Signal, Image and Video Processing. 17:1153-1160
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b638c53a690e1db9615543f0e71050f
https://doi.org/10.1007/s11760-022-02322-z
https://doi.org/10.1007/s11760-022-02322-z
Autor:
Shuo, Wang, Kan, Zhang, Tao, An, Chaoquan, Hu, Qingnan, Meng, Yuanzhi, Ma, Mao, Wen, Weitao, Zheng
Publikováno v:
In Applied Surface Science 1 February 2015 327:68-76
Autor:
Yuanzhi Ma, Hongbo Ling, Xiaoya Deng, Feifei Han, Fujie Li, Junjie Yan, Yanming Gong, Guangpeng Zhang, Qianjuan Shan, Ziwei Kang, Ayong Jiao
Previous studies have mostly focused on the annual CO2 emissions from drawdown areas on a global scale. However, in drylands, which are more sensitive to global change, finely characterizing the relative importance of drawdown areas on waters (RIDW)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0906127bb66223e7b3b2efa3d6fe4bc5
https://doi.org/10.21203/rs.3.rs-2267758/v1
https://doi.org/10.21203/rs.3.rs-2267758/v1
Autor:
Jonathan M. Goodwill, Qiyun Xu, Marek Skowronski, Karren L. More, Yuanzhi Ma, David A. Cullen
Publikováno v:
ACS Applied Materials & Interfaces. 12:27378-27385
The valence change model describes the resistive switching in metal oxide-based devices as due to electroreduction of the oxide and subsequent electromigration of oxygen vacancies. Here, we present cross-sectional X-ray energy-dispersive spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff7e5825769346ba8148467266bbe34
https://doi.org/10.1021/acsami.0c06960
https://doi.org/10.1021/acsami.0c06960
Publikováno v:
ACS Applied Electronic Materials. 2:683-691
We present experimental results of relaxation oscillations based on the TaOx threshold switching devices as a function of voltage, load resistance, and the parallel capacitance. Of particular inter...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39e79c03a6f05b7115dbc9e6ba9e6f81
https://doi.org/10.1021/acsaelm.9b00782
https://doi.org/10.1021/acsaelm.9b00782
Autor:
Yuanzhi, Ma, David A, Cullen, Jonathan M, Goodwill, Qiyun, Xu, Karren L, More, Marek, Skowronski
Publikováno v:
ACS applied materialsinterfaces. 12(24)
The valence change model describes the resistive switching in metal oxide-based devices as due to electroreduction of the oxide and subsequent electromigration of oxygen vacancies. Here, we present cross-sectional X-ray energy-dispersive spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0b7e0281826e4642722d3afc36c70e82
https://pubmed.ncbi.nlm.nih.gov/32441092
https://pubmed.ncbi.nlm.nih.gov/32441092
Autor:
Yuanzhi Ma
The increasing demand on memory from the next-generation technologies facilitated the pathfinding and development of emerging memories, among which Resistive Random-Access Memory (RRAM) is one of the most competitive options and least understood. Man
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0669bf1e355081c6c6a6b4a67c90d955
Autor:
James A. Bain, Andrew A. Herzing, Brian T. Sneed, Marek Skowronski, Yuanzhi Ma, Karren L. More, David A. Cullen, Noel T. Nuhfer, Dasheng Li
Publikováno v:
ACS Applied Materials & Interfaces. 10:23187-23197
The distribution of tantalum and oxygen ions in electroformed and/or switched TaOx-based resistive switching devices has been assessed by high-angle annular dark-field microscopy, X-ray energy-dispersive spectroscopy, and electron energy-loss spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59acb5f73bddce3a7e723929a6d1e25b
https://doi.org/10.1021/acsami.8b03726
https://doi.org/10.1021/acsami.8b03726