Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Yuanzhe Yao"'
Publikováno v:
IEEE Access, Vol 8, Pp 82493-82499 (2020)
In this paper, we realize high-accuracy side-effect prediction of Traditional Chinese Medicine Compound Prescription by introducing network embedding and deep learning. A random walk network that could efficiently interpret the information in the pre
Externí odkaz:
https://doaj.org/article/cc4b87ed566c41de8c927005e32e86f9
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-10 (2019)
Abstract A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown voltage (BV) is proposed in this work. By deliberately designing
Externí odkaz:
https://doaj.org/article/d3a364a08a664efcb1192a5eef8de2c2
Publikováno v:
Applied Sciences, Vol 9, Iss 15, p 3054 (2019)
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxin
Externí odkaz:
https://doaj.org/article/db0e33de00e1408b80b56866e52e6f51
Publikováno v:
Electronics; Volume 11; Issue 23; Pages: 3843
The tracker based on the Siamese network describes the object-tracking task as a similarity-matching problem. The Siamese network is the current mainstream model. It achieves similarity learning by applying correlation filters to the target and searc
Publikováno v:
IEEE Transactions on Electron Devices. 68:2212-2219
Gallium nitride (GaN) devices have been successfully commercialized due to their superior performance, especially their high-power transformation efficiency. To further reduce the power consumption of these devices, the optimization for the ohmic con
Publikováno v:
2022 IEEE 2nd International Conference on Software Engineering and Artificial Intelligence (SEAI).
Publikováno v:
2021 9th International Symposium on Next Generation Electronics (ISNE).
In high power Light-Emitting Diode (LED) illumination, the alternating current input and LED-compatible monolithic integration of the current regulator driver are demanded. In this work, we firstly report a novel GaN bidirectional current regulator b
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-10 (2019)
A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown voltage (BV) is proposed in this work. By deliberately designing the widt
Autor:
Chunpeng Wang, Di Yang, Shengji Wang, Xinghuan Chen, Yuanzhe Yao, Zhenwei Zhang, Jun Cao, Zirui Wang, Zeheng Wang
Publikováno v:
IEEE Transactions on Electron Devices. 66:1917-1923
A class of novel tunable light-emission-diode (LED)-compatible current regulator, including the reverse blocking and the reverse conducting device, is proposed by integrating the p-GaN cap with a voltage nanosensor on the AlGaN/GaN platform. Verified
Publikováno v:
Superlattices and Microstructures. 125:144-150
A novel lateral heterojunction diode with a low turn-on voltage is proposed in this paper. Verified by theoretical analysis and simulations, it is partially relaxed InGaN channel that maintains the 2DEG under the recessed gate leading to a huge turn-