Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Yuanyuan V. Li"'
Autor:
Kevin D. Leedy, Yuanyuan V. Li, J. Israel Ramirez, Gregg H. Jessen, Thomas N. Jackson, Burhan Bayraktaroglu, Hitesh A. Basantani
Publikováno v:
IEEE Transactions on Nuclear Science. 62:1399-1404
We report effects for up to 100 Mrad ( ${{\rm SiO}_2}$ ) gamma-ray exposure on polycrystalline ZnO thin film transistors (TFTs) deposited by two different techniques. The radiation related TFT changes, either with or without electrical bias during ir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b24cea10b19860b0e4abbdecca3417
https://doi.org/10.1109/tns.2015.2417831
https://doi.org/10.1109/tns.2015.2417831
Autor:
Yuanyuan V. Li, Dalong A. Zhao, John E. Anthony, Thomas N. Jackson, Devin A. Mourey, Marsha A. Loth
Publikováno v:
Organic Electronics. 14:2411-2417
We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::395fb468f988ec613fc6f0982b7054d8
https://doi.org/10.1016/j.orgel.2013.06.007
https://doi.org/10.1016/j.orgel.2013.06.007
Publikováno v:
Organic Electronics II: More Materials and Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2819894318940f4442f16da8b287d36
https://doi.org/10.1002/9783527640218.ch10
https://doi.org/10.1002/9783527640218.ch10
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1986efda9c0b2ef9e953ad96967ee9f
https://doi.org/10.1109/iedm.2015.7409736
https://doi.org/10.1109/iedm.2015.7409736
Publikováno v:
IEEE Electron Device Letters. 34:1400-1402
In this letter, we report trilayer ZnO thin-film transistors (TFTs) with in situ Al2O3 passivation fabricated using plasma-enhanced atomic layer deposition. The bottom-gate, top-contact TFTs use an Al2O3-ZnO-Al2O3 trilayer deposited in one deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a4fa7b31d54f5bc3e833b24f7c1f060
https://doi.org/10.1109/led.2013.2283337
https://doi.org/10.1109/led.2013.2283337
Publikováno v:
IEEE Electron Device Letters. 34:891-893
In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::534420fd1ac709dfc08a53131dcea489
https://doi.org/10.1109/led.2013.2263193
https://doi.org/10.1109/led.2013.2263193
Publikováno v:
ACS applied materialsinterfaces. 6(10)
We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd257300f750902297b7f84d418e68ef
https://pubmed.ncbi.nlm.nih.gov/24818868
https://pubmed.ncbi.nlm.nih.gov/24818868
Publikováno v:
71st Device Research Conference.
Radiation tolerance is of interest in electronic applications such as radiation sensors, nuclear reactors, x-ray imagers, and high-energy particle accelerators. While properly designed Si MOSFETS are usefully radiation resistant, most thin-film trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8566026a8949feae350eb1ab0585cee
https://doi.org/10.1109/drc.2013.6633848
https://doi.org/10.1109/drc.2013.6633848
Autor:
Joan M. Redwing, Nikolas J. Podraza, Haoting Shen, Xin Wang, Yuanyuan V. Li, Chito E. Kendrick, Thomas N. Jackson, Yu Yuwen, Elizabeth C. Dickey, J. Israel Ramirez, Yue Ke, Theresa S. Mayer
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c69f7387119100b7b4e5c84c719052af
https://doi.org/10.1109/pvsc.2013.6744975
https://doi.org/10.1109/pvsc.2013.6744975
Publikováno v:
71st Device Research Conference.
In oxide semiconductors, defect chemistry and hydrogen can influence free carrier concentration and these materials can have strong interactions with the atmosphere and contaminents.[1,2] An inverted staggered structure is commonly used for oxide TFT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fa30d6193473fbe243d37361fa0466b
https://doi.org/10.1109/drc.2013.6633846
https://doi.org/10.1109/drc.2013.6633846