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pro vyhledávání: '"Yuanlu Xie"'
Autor:
Xu Zheng, Lizhou Wu, Yuanlu Xie, Jinru Lai, Wenxuan Sun, Jie Yu, Danian Dong, Zhaoan Yu, Xiaoyong Xue, Bing Chen, Yan Yang, Xiaoxin Xu, Qi Liu, Ming Liu
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In this work, a machine learning‐assisted prediction model is proposed to analyze the reliability issues in the 28 nm resistive random access memory (RRAM) chip with raw data measured from RRAM test chip. The neural network of long‐short
Externí odkaz:
https://doaj.org/article/8d0e7e76f7a649c7bd6b19023071e947