Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Yuan-Jen Lee"'
Autor:
Yuan-Jen Lee, 李元仁
91
We theoretically analyzed the interlayer exchange coupling between a ferromagnetic layer and an antiferromagnetic layer through nonmagnetic metal spacer. The Ruderman-Kittel-Kasuya-Yosida interaction is used to calculate the interlayer exchan
We theoretically analyzed the interlayer exchange coupling between a ferromagnetic layer and an antiferromagnetic layer through nonmagnetic metal spacer. The Ruderman-Kittel-Kasuya-Yosida interaction is used to calculate the interlayer exchan
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/41919440898469174342
Autor:
Yuan-Jen Lee, 李原任
90
During the past five decades, Taiwan had experienced dramatic transformations, from an agricultural society to an industrial and commercial ones, living standards leveled up, citizens’ wealth accumulated rapidly, and death rate decreased co
During the past five decades, Taiwan had experienced dramatic transformations, from an agricultural society to an industrial and commercial ones, living standards leveled up, citizens’ wealth accumulated rapidly, and death rate decreased co
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/50495650411452890113
Autor:
Yuan-Jen Lee
Publikováno v:
2021 4th International Conference on Information Management and Management Science.
The purpose of this study is to analyze how service quality and customer satisfaction impact behavioral intention, an indicator of hospital choice, in Shanghai during the COVID-19 pandemic. A total of 311 responses were collected through a convenienc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::388a0f43631d83b8117452d53db475f7
https://doi.org/10.1145/3485190.3485222
https://doi.org/10.1145/3485190.3485222
Autor:
Luc Thomas, Jesmin Haq, Ru-Ying Tong, Teng Zhongjian, Shen Dongna, Hideaki Fukuzawa, Po-Kang Wang, Guenole Jan, Son Thai Le, Vignesh Sundar, Vinh Lam, Yu-Jen Wang, Jian Zhu, Renren He, Yang Yi, Tom Zhong, Santiago Serrano-Guisan, Paul Y. Liu, Huanlong Liu, Sahil Patel, Yuan-Jen Lee, Jodi Iwata-Harms
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
Scientific Reports
Scientific Reports
Perpendicular magnetic anisotropy (PMA) ferromagnetic CoFeB with dual MgO interfaces is an attractive material system for realizing magnetic memory applications that require highly efficient, high speed current-induced magnetic switching. Using this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0da8a16e79ec54d59a1371e363c41417
https://doi.org/10.1038/s41598-019-54466-7
https://doi.org/10.1038/s41598-019-54466-7
Autor:
Yuan-Jen Lee, Yang Yi, Renren He, Vignesh Sundar, Huanlong Liu, Vinh Lam, Son Thai Le, Jodi Iwata-Harms, Sahil Patel, Shen Dongna, Jesmin Haq, Luc Thomas, Ru-Ying Tong, Santiago Serrano-Guisan, Hideaki Fukuzawa, Tom Zhong, Po-Kang Wang, Guenole Jan, Jeffrey Teng, Yu-Jen Wang, Jian Zhu
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
To consider STT-MRAM as an SRAM replacement, the reliability of the MTJ devices has to be demonstrated. A comprehensive study of degradation of STT-MRAM magnetic tunnel junction barrier under stress is presented in this paper. It is found that the br
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05a8e1d614176fcb08d1a502a7cf363f
https://doi.org/10.1109/vlsi-tsa.2019.8804693
https://doi.org/10.1109/vlsi-tsa.2019.8804693
Autor:
Tom Zhong, Santiago Serrano-Guisan, Jesmin Haq, Jodi Iwata-Harms, Guenole Jan, Sahil Patel, Teng Zhongjian, Yuan-Jen Lee, Renren He, Son T. Le, Yang Yi, Paul Liu, Vignesh Sundar, Shen Dongna, Luc Thomas, Ru-Ying Tong, Vinh Lam, Yu-Jen Wang, Jian Zhu, Hideaki Fukuzawa, Po-Kang Wang, Huanlong Liu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Last-Level-Cache applications at OX technology nodes require devices switching reliably in less than 10ns at currents smaller than 50uA, while preserving data retention up to 85°C. In this paper, we show that both low Gilbert damping and low magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ecf43055b69484aea50951849f27ca2
https://doi.org/10.1109/iedm.2018.8614700
https://doi.org/10.1109/iedm.2018.8614700
Autor:
Vignesh Sundar, Zhongjian Jeffrey Teng, Yu-Jen Wang, Jian Zhu, Luc Thomas, Ru-Ying Tong, Sahil Patel, Shen Dongna, Vinh Lam, Hideaki Fukuzawa, Yang Yi, Po-Kang Wang, Guenole Jan, Tom Zhong, Jesmin Haq, Son T. Le, Santiago Serrano-Guisan, Renren He, Huanlong Liu, Yuan-Jen Lee, Jodi Iwata-Harms
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We present for the first time STT-MRAM devices with ultra low operating voltage and power compatible with next generation 0x node logic voltages. By engineering the tunnel barrier and improving the efficiency of the devices we report a record low wri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a7738f2a2bd93f1ae7e1f1a46263c1
https://doi.org/10.1109/vlsit.2018.8510672
https://doi.org/10.1109/vlsit.2018.8510672
Autor:
Luc Thomas, Allen Wang, Yung-Huei Lee, Derek Lin, Po-Kang Wang, Guenole Jan, Harry Chuang, Chang Chih-Yang, Chen Chia-Hsiang, William J. Gallagher, Wayne Wang, Tom Zhong, Jian Zhu, Chih-Hui Weng, Yuan-Jen Lee, Chiang Tien-Wei, Chia-Yu Wang, Kuei-Hung Shen, Huanlong Liu, Meng-Chun Shih
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
External magnetic field resistance under write, read operations for perpendicular STT-MRAM qualified for 260°C solder reflow is comprehensively reported for the first time. We show that the most critical polarization direction is writing from parall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd9c46601e11efb6958d0b3ed2d3d16
https://doi.org/10.1109/iedm.2017.8268432
https://doi.org/10.1109/iedm.2017.8268432
Autor:
Son T. Le, Santiago Serrano-Guisan, Sahil Patel, Jesmin Haq, Vinh Lam, Shen Dongna, Tom Zhong, Renren He, Yang Yi, Vignesh Sundar, Po-Kang Wang, Guenole Jan, Yu-Jen Wang, Jian Zhu, Huanlong Liu, Paul Liu, Yuan-Jen Lee, Luc Thomas, Ru-Ying Tong, Jodi Iwata-Harms, Teng Zhongjian
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
Scaling STT-MRAM cells beyond 1X technology nodes will require MTJ devices smaller than 30 nm. For such small sizes, process-induced damage becomes a primary factor of device performance. A robust method of assessing magnetic properties of sub-30 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66388db61bc92fbf9fe3e3b6fec8e482
https://doi.org/10.1109/iedm.2017.8268516
https://doi.org/10.1109/iedm.2017.8268516
Autor:
Thomas, Luc, Guenole Jan, Jian Zhu, Huanlong Liu, Yuan-Jen Lee, Son Le, Ru-Ying Tong, Keyu Pi, Yu-Jen Wang, Dongna Shen, He, Renren, Haq, Jesmin, Teng, Jeffrey, Lam, Vinh, Huang, Kenlin, Zhong, Tom, Torng, Terry, Po-Kang Wang
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 17, p172615-1-172615-6, 6p