Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Yuan-Hsiang Cheng"'
Autor:
Yuan-Hsiang Cheng, 程元祥
100
This study focused on the chip bonding in the electronic assembling process and self-designed a shear stress measurement system to measure the bonding force between LED chip and substrate, which utilized the linear movement principle to driv
This study focused on the chip bonding in the electronic assembling process and self-designed a shear stress measurement system to measure the bonding force between LED chip and substrate, which utilized the linear movement principle to driv
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/7e8ur8
Autor:
Yuan-Hsiang Cheng, 鄭遠翔
93
In the late 1970s, the People Republic of China (PRC) began its Reformation and Openness Policy, and put the transformation from Traditional Planning Economic System to Market Economic System into practice. The PRC showed its nation volition
In the late 1970s, the People Republic of China (PRC) began its Reformation and Openness Policy, and put the transformation from Traditional Planning Economic System to Market Economic System into practice. The PRC showed its nation volition
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/84188867068522381464
Autor:
Hsien-Chin Chiu, Kuang-Po Hsueh, Li-Yi Peng, Hsiang-Chun Wang, Rong Xuan, Yuan-Hsiang Cheng, Hou-Yu Wang, Chih-Wei Hu
Publikováno v:
Materials Science in Semiconductor Processing. 66:69-73
AlGaN/GaN Schottky barrier diodes (SBDs) are popularly demonstrated on 6-in. silicon substrate for next generation motor drive and power supply applications. The epitaxial structures with various inserted AlN spacer layer thicknesses have been invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e0230991b941bc35c8f995e9a3fe2f
https://doi.org/10.1016/j.mssp.2017.04.001
https://doi.org/10.1016/j.mssp.2017.04.001
Autor:
Kuang-Po Hsueh, Li-Yi Peng, Hsien-Chin Chiu, Hsuan-Ling Kao, Yuan-Hsiang Cheng, Hou-Yu Wang, Hsiang-Chun Wang
Publikováno v:
Journal of Alloys and Compounds. 703:204-209
Low reverse recovery charge and low turn-on voltage AlGaN/GaN Schottky barrier diodes were fabricated on a 6-inch Si (111) substrates using a recessed anode and N 2 O plasma-oxidized AlON compound spacer. The N 2 O plasma-treated areas at the anode e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c6b3a731b2eb67e42577e86bef1b8a
https://doi.org/10.1016/j.jallcom.2017.01.325
https://doi.org/10.1016/j.jallcom.2017.01.325
Autor:
Hsien-Chin Chiu, Yuan Hsiang Cheng, Hou Yu Wang, Hsiang Chun Wang, Li Yi Peng, Jen-Inn Chyi, Hsuan-Ling Kao
Publikováno v:
Journal of The Electrochemical Society. 163:H155-H158
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5eb6eaf85b01fd48adb623204b8f2f7
https://doi.org/10.1149/2.0241603jes
https://doi.org/10.1149/2.0241603jes
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
In this work, we design a 70nm Mg doped GaN stacked on standard GaN HEMTs structure, the concentration is 5×1019 cm3. The enhancement mode GaN HEMTs was sequential manufactured following by standard semiconductor procedure. The V th , maximum Ids, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c517971866fe359c744a2aec6a6d55
https://doi.org/10.1109/edssc.2015.7285206
https://doi.org/10.1109/edssc.2015.7285206
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a SiC substrate were presented for power switching applications. In order to investigate the effects of an Fe-doped GaN buffer on device characteristics, HEMT devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe86f3d859718eb1d0ebb911e67d0238
https://doi.org/10.1109/edssc.2015.7285198
https://doi.org/10.1109/edssc.2015.7285198
Autor:
Yuan Hsiang Cheng, 鄭元翔
104
AlGaN/GaN heterostructures have demonstrated a great potential in high speed and high power electronics due to their high device breakdown voltage and high current density, which are two key factors in high power switching applications such
AlGaN/GaN heterostructures have demonstrated a great potential in high speed and high power electronics due to their high device breakdown voltage and high current density, which are two key factors in high power switching applications such
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/rvkf5v