Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Yuan-Chun Luo"'
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 8, Pp n/a-n/a (2022)
Conventional resistive crossbar array for in‐memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” crossbar array that harnesses transient current and charge transfer is gaining
Externí odkaz:
https://doaj.org/article/406bf8867b924bf09bca86c06477d543
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 168-174 (2021)
Ferroelectric Hf0.5Zr0.5O2 (HZO) thin film has obtained considerable attention for emerging non-volatile memory (eNVM) and synaptic device applications. To our best knowledge, the polarization switching of HZO has not been comprehensively investigate
Externí odkaz:
https://doaj.org/article/eaf1046bc0d94e6a985458b021b89d78
Autor:
Yuan-Chun Luo, 羅元駿
92
The purpose of this study was to investigate the effects of experiential learning-based outdoor education program upon personal life effectiveness. First, the study consisted of 48 participants who participated the outdoor education programs
The purpose of this study was to investigate the effects of experiential learning-based outdoor education program upon personal life effectiveness. First, the study consisted of 48 participants who participated the outdoor education programs
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/77966816338686696108
Autor:
Anni Lu, Jae Hur, Yuan-Chun Luo, Hai Li, Dmitri E. Nikonov, Ian A. Young, Yang-Kyu Choi, Shimeng Yu
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 13:422-435
Autor:
Ankit Kaul, Yandong Luo, Xiaochen Peng, Madison Manley, Yuan-Chun Luo, Shimeng Yu, Muhannad S. Bakir
Publikováno v:
IEEE Transactions on Electron Devices. 70:485-492
Autor:
Omkar Phadke, Khandker Akif Aabrar, Yuan-chun Luo, Sharadindu Gopal Kirtania, Asif Islam Khan, Suman Datta, Shimeng Yu
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:784-788
Resistive crossbar array for in-memory computing suffers from high static power and sneak-path current. To address these issues, we proposed a ferroelectric HfxZr1-xO2 (HZO) based capacitive crossbar array for in-memory computing. The non-volatile ca
Publikováno v:
IEEE Transactions on Electron Devices. 69:109-114
Autor:
Anni Lu, Jae Hur, Yuan-Chun Luo, Hai Li, Dmitri E. Nikonov, Ian Young, Yang-Kyu Choi, Shimeng Yu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Publikováno v:
IEEE Transactions on Electron Devices. 68:3176-3180
To scale the ferroelectric random access memory (FeRAM) technology toward 28 nm or beyond, it is critical to develop stacked capacitor (with sufficient surface area) to allow good sense margin for the 1-transistor- 1-capacitor (1T1C) bit cell. Theref