Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Yu.V. Pogorelsky"'
Autor:
S. I. Petrov, V. P. Chalyi, A. É. Byrnaz, D. M. Krasovitsky, Yu.V. Pogorelsky, M. V. Stepanov, A. P. Shkurko, M. A. Sokolov, I. A. Sokolov, M. V. Pavlenko, A. N. Alekseev
Publikováno v:
Semiconductors. 41:1005-1010
The effect of growth conditions (V/III ratio, substrate temperature) on the properties of materials in AlN-GaN systems is discussed. A concept of the growth of the AlN/AlGaN/GaN multilayer heterostructure, which provides the improvement of crystal qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d6153765cfdfc0e97174143f4897e3
https://doi.org/10.1134/s1063782607090011
https://doi.org/10.1134/s1063782607090011
Autor:
N. I. Podolskaya, V. P. Chaly, D. M. Krasovitsky, S. B. Aleksandrov, K. A. Bulashevich, L. E. Velikovsky, I. A. Sokolov, M. V. Pavlenko, D. A. Baranov, Yu.V. Pogorelsky, M. A. Sokolov, S. I. Petrov, S. Yu. Karpov
Publikováno v:
physica status solidi (c). 2:2688-2691
The double heterostructure (DHS) high-electron mobility transistor (HEMTs) grown by ammonia molecular beam epitaxy (MBE) is investigated both experimentally and theoretically. The band diagram and the sheet 2D electron concentration are computed, pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc449ff01f6bdb5f5e761eae185a3630
https://doi.org/10.1002/pssc.200461394
https://doi.org/10.1002/pssc.200461394
Publikováno v:
Journal of Crystal Growth. 166:167-171
A thermodynamic approach was applied to the analysis of thermal etching of both binary and ternary III–V compounds in vacuo. Two different regimes of etching based on the congruent and on the non-congruent vaporization, may be distinguished. The la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3948afb12a85b66861e698bb3e40660b
https://doi.org/10.1016/0022-0248(96)00040-1
https://doi.org/10.1016/0022-0248(96)00040-1
Autor:
S. Yu. Karpov, A. L. Ter-Martirosyan, V. P. Chaly, D. M. Demidov, I. Yu. Rusanovich, V.E. Myachin, A. P. Shkurko, Yu.V. Pogorelsky, G. A. Fokin
Publikováno v:
Journal of Crystal Growth. 150:1350-1353
The results of statistical analysis of the characteristics of high-power semiconductor lasers grown by molecular beam epitaxy are presented. Three types of heterostructures are compared. It is shown that widening of a graded refractive index (GRIN) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69831d0cb106e86a3c4fe2eb9d6e1e5
https://doi.org/10.1016/0022-0248(95)80158-9
https://doi.org/10.1016/0022-0248(95)80158-9
Publikováno v:
Journal of Crystal Growth. 146:344-348
The reflection high energy electron diffraction (RHEED) intensity oscillation method is used for the analysis of nucleation kinetics of GaAs and AlAs during molecular beam epitaxy. The comparison shows that AlAs, in contrast to GaAs, reveals the grad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80fc2da30be81c48b96db21f56a78f2f
https://doi.org/10.1016/0022-0248(94)00556-7
https://doi.org/10.1016/0022-0248(94)00556-7
Publikováno v:
Surface Science. 314:79-88
Nucleation and the subsequent growth kinetics of GaAs during molecular beam epitaxy were studied by the RHEED intensity oscillation method. From the oscillation curve profile within one period, the evolution of a new monolayer of coverage was extract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c31e28250b5a219a20b22ef835fc347
https://doi.org/10.1016/0039-6028(94)90214-3
https://doi.org/10.1016/0039-6028(94)90214-3
Autor:
A P Shcurko, G. A. Fokin, A Yu Ostrovsky, V. P. Chaly, Yu.V. Pogorelsky, A. L. Ter-Martirosyan, V.E. Myachin, S. Yu. Karpov, M. I. Etinberg, I. Yu. Rusanovich, A Sokolov, N A Strugov
Publikováno v:
Semiconductor Science and Technology. 9:345-348
The influence of the growth temperature of ternary compounds on the degradation rate of AlGaAs/GaAs laser diodes was studied. The optimal temperature was found to be 700 degrees C. A further reduction in the degradation rate may be achieved by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b46aa2963acbd0b2f5f137a20a0cb98
https://doi.org/10.1088/0268-1242/9/4/002
https://doi.org/10.1088/0268-1242/9/4/002
Autor:
A. P. Shkurko, S. Yu. Karpov, I.A. Sokolov, D. M. Krasovitsky, B. Borisov, D. M. Demidov, V. P. Chaly, Yu.V. Pogorelsky
Publikováno v:
Journal of Crystal Growth. 206:147-149
Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser reflectometry. In contrast to other III–V compounds In droplets are found to be formed on the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d54965c1a69d5375cc47b2415d5c72a4
https://doi.org/10.1016/s0022-0248(99)00298-5
https://doi.org/10.1016/s0022-0248(99)00298-5
Autor:
V. P. Chaly, A. L. Dudin, I. A. Sokolov, M. V. Stepanov, A. L. Ter-Martirosyan, A. P. Shkurko, A.N. Alexeev, Yu.V. Pogorelsky, B. Borisov, D. M. Krasovitsky, D. M. Demidov
Publikováno v:
Scopus-Elsevier
The growth rate evolution versus V/III ratio and substrate temperature was studied by means of optical reflectivity during MBE of GaN layers using NH3 as nitrogen source. The GaN desorption becomes observable at temperatures above 800°C and causes t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fb4d7515c5efa3bbbedb91f26564870
https://doi.org/10.1557/s1092578300000624
https://doi.org/10.1557/s1092578300000624
Publikováno v:
Scopus-Elsevier
A new (2 X 1) surface structure was observed during the c(4 X 4) → (2 X 4) transition while increasing the temperature in the range of 430-500°C. Different models based on the electron stability criterion are proposed for this structure. Predictio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a2e2b853f80e62c2e63b97c65c728de
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030230962&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0030230962&partnerID=MN8TOARS
