Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yu.V. Pavlovskyy"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 22, Iss 3, Pp 437-443 (2021)
The influence of growth impurities (oxygen and carbon) on the thermalsdefect formation in silicon single crystals has been studied. Annealing was carried out in the temperature range 700-1100°C in steps of 50°C for 5 hours at each temperature. The
Externí odkaz:
https://doaj.org/article/d4c10cb806194aa3a3d3b05375f0a26f
Autor:
R.M. Vernydub, O.I. Kyrylenko, O.V. Konoreva, Ya.M. Olikh, P.G. Litovchenko, Yu.V. Pavlovskyy, P. Potera, V.P. Tartachnyk
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 201-207 (2020)
Commercial orange and yellow GaAs1–хPх LEDs were irradiated by 2 MeV electrons with fluences of 1014…2·1016 сm–2, and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown tha
Externí odkaz:
https://doaj.org/article/cdff775d46d542338be4037157fbf45f
Publikováno v:
Фізика і хімія твердого тіла, Vol 22, Iss 3, Pp 437-443 (2021)
The influence of growth impurities (oxygen and carbon) on the thermalsdefect formation in silicon single crystals has been studied. Annealing was carried out in the temperature range 700-1100°C in steps of 50°C for 5 hours at each temperature. The
Autor:
V.P. Tartachnyk, Ya. M. Olikh, P.G. Litovchenko, O.V. Konoreva, Yu.V. Pavlovskyy, O.I. Kyrylenko, P. Potera, R.M. Vernydub
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 201-207 (2020)
Commercial orange and yellow GaAs1–хPх LEDs were irradiated by 2 MeV electrons with fluences of 1014…2·1016 сm–2, and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown tha
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 1, Pp 14-20 (2018)
By the method of chemical transport reactions in the closed halogen system Si-Au-Pt-B-Br, whiskers Si1-xGex x = 0.01-0.08 of transverse dimensions 0.1-100 μm were grown. Structural and magnetic properties of the obtained crystals are investigated. T
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 2, Pp 198-201 (2017)
The magnetic field experimental dependences of vanadium and chlorine doped Cd1-xZnxTe monocrystals magnetic susceptibility have been research. The magnetic susceptibility non-linearity has been observed. It is shown that this non-linearity due to sup
Autor:
P. G. Litovchenko, I. Ostrovskii, Anatoly Druzhinin, N. T. Pavlovska, Yu.O. Ugrin, Yu.V. Pavlovskyy, Yu. Khoverko, Krzysztof Rogacki
Publikováno v:
Journal of Magnetism and Magnetic Materials. 393:310-315
The effect of 8.6·1017 n/cm2 fast neutron irradiation on the magnetic susceptibility and magnetoresistance of Si whiskers with impurity concentration near metal–insulator transition (MIT) has been studied. Neutron irradiated specimens with boron c
Publikováno v:
2016 IEEE 7th International Conference on Advanced Optoelectronics and Lasers (CAOL).
In this paper by the method of pulsed laser deposition (PLD) we obtained thin films of zinc oxide doped with manganese — diluted magnetic semiconductor (DMS). The films consist of densely packed small crystallites. The crystalline structure of the
Autor:
A. A. Druzhinin, V. M. Tsmots, N. T. Pavlovska, Yu.V. Pavlovskyy, A. Ya. Karpenko, I. P. Ostrovskyy, Yu. Khoverko, P.G. Litovchenko
Publikováno v:
Sensor Electronics and Microsystem Technologies; Том 7, № 4 (2010); 5-8
Сенсорная электроника и микросистемные технологии; Том 7, № 4 (2010); 5-8
Сенсорна електроніка і мікросистемні технології; Том 7, № 4 (2010); 5-8
Сенсорная электроника и микросистемные технологии; Том 7, № 4 (2010); 5-8
Сенсорна електроніка і мікросистемні технології; Том 7, № 4 (2010); 5-8
The impact of proton irradiation and high magnetic field on the electroconductivity and magnetoresistance of Si1-xGex (õ = 0,03) whiskers with resistance of ρ = 0,008–0,025 Ohm∙cm in the temperature range of 4,2–300 Ê.is studied. It is fount
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