Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yu.N. Yankovski"'
Autor:
V. Yu. Yavid, V. B. Odzaev, D. V. Shestovski, V. A. Pilipenko, U. S. Prosolovich, Yu.N. Yankovski, V. A. Filipenia, A. N. Pyatlitski
Publikováno v:
Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series. 57:232-241
Herein, the temperature dependences of the static current gain (β) of bipolar n-p-n-transistors, formed by similar process flows (series A and B), in the temperature range 20–125 °С was investigated. The content of uncontrolled technological imp
Autor:
A. A. Kharchenko, V. B. Odzaev, S. D. Brinkevich, Yu.N. Yankovski, D. I. Brinkevich, V. S. Prosolovich
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:558-561
We measure the reflectance spectra of 1.8 µm-thick FP9120 photoresist films doped with antimony ions and deposited by centrifugation on the surface of p-type silicon wafers (ρ = 10 Ω cm) with a (111) orientation. Implantation leads to a decrease i
Publikováno v:
Vacuum. 78:251-254
The processes of defect formation in silicon following high-energy ion implantation were studied using the Hall effect and IR absorption spectroscopy. Point radiation defects were found far beyond the region of typical ion projected ranges. It is sug
Publikováno v:
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843).
MOSFET-transistors are active elements of SHF integrated circuits. The SHF-transistor parameters optimization method has been designed. It is shown that holmium doping of silicon can be useful in the technology of SHF-devices. The use of silicon dope
Publikováno v:
12th International Conference Microwave and Telecommunication Technology.
It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-st
Publikováno v:
13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003..
It is shown that Ge-doping of silicon may be implemented in the technology of the SHF IC manufacture. Epitaxial layers doped with germanium allow for the leakage current to be decreased and for the breakdown voltage of p-n-junctions and MOS structure
Publikováno v:
11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487).
Optimization method of the SHF-transistors parameters has been designed. It is shown that germanium incorporation into SiO/sub 2/ reduces the leakage current and increases the breakdown voltage of MOS-structures.
Publikováno v:
2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415).
The method for precise adjustment of reverse restoration time in microwave diodes by /spl gamma/-quantum /sup 60/Co radiation without considerable variation of volt-ampere characteristic, is discussed.
Publikováno v:
Scopus-Elsevier
Formation of active areas of n-p-n-transistors for submicronic integrated microcircuits was investigated at scaling carrying out. It was shown, that reduction of energy and doze of base doping allows increasing a direct coefficient of amplification o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63d09aec2615836f88d23d95963b614c
http://www.scopus.com/inward/record.url?eid=2-s2.0-78650362847&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-78650362847&partnerID=MN8TOARS
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