List of Contributors

Autor: I.O. Akhundov, V.Sh. Aliev, V.L. Alperovich, A.P. Anciferov, A.L. Aseev, A.K. Bakarov, I.I. Beterov, M.V. Budantsev, A.A. Bykov, A.V. Chaplik, A. Chin, I.A. Derebezov, D.V. Dmitriev, S.A. Dvoretsky, A.V. Dvurechenskii, M.V. Entin, V.M. Entin, L.I. Fedina, T.A. Gavrilova, K.V. Grachev, V.A. Gritsenko, A.K. Gutakovskii, A.V. Haisler, V.A. Haisler, D.G. Ikusov, D.R. Islamov, E.V. Ivanova, M.M. Kachanova, V.V. Kaichev, A.K. Kalagin, A.N. Karpov, D.M. Kazantsev, S.S. Kosolobov, A.S. Kozhukhov, D.A. Kozlov, V.D. Kuzmin, Z.D. Kvon, A.V. Latyshev, A.S. Mardezov, A.S. Medvedev, N.N. Mikhailov, A.G. Milekhin, D.A. Nasimov, I.G. Neizvestny, L.A. Nenasheva, E.B. Olshanetsky, T.V. Perevalov, A.G. Pogosov, D.A. Pokhabov, V.P. Popov, V.Ya. Prinz, V.G. Remesnik, S.V. Rihlicky, E.E. Rodyakina, D.I. Rogilo, K.N. Romanyuk, N.S. Rudaya, I.I. Ryabtsev, I.V. Sabinina, V.K. Sandyrev, A.A. Saraev, O.I. Semenova, D.V. Sheglov, A.A. Shevyrin, A.A. Shklyaev, V.A. Shvets, N.L. Shwartz, G.Yu. Sidorov, Yu.G. Sidorov, S.V. Sitnikov, E.V. Spesivcev, A.S. Terekhov, S.A. Teys, O.A. Tkachenko, V.A. Tkachenko, A.I. Toropov, D.B. Tretyakov, A.V. Tsarev, I.E. Tyschenko, I.N. Uzhakov, V.S. Varavin, S.A. Vitkalov, A.I. Yakimov, M.V. Yakushev, A.S. Yaroshevich, D.R.T. Zahn, M.V. Zamoryanskaya, E.Yu. Zhdanov, Yu.A. Zhivodkov

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0da5de83dc57a11bf54bce44596bd0a4
https://doi.org/10.1016/b978-0-12-810512-2.00028-7

A study of tellurium adsorption processes on silicon by ellipsometry, RHEED and AES methods

Autor: M. V. Yakushev, Yu.G. Sidorov, D. N. Pridachin, V. A. Shvets

Publikováno v: Applied Surface Science. 142:485-489

The adsorption processes of tellurium and arsenic on Si {113} has been studied using ex-situ spectroscopic ellipsometry (SE), reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). It was established that tellurium

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3d88013c1cebc3f3c07e2f74939ab50f
https://doi.org/10.1016/s0169-4332(98)00922-2

Growth of Hg_{1-xCdxTe nanostructures by molecular beam epitaxy with ellipsometric control}

Autor: V. A. Shvets, R.N. Smirnov, Yu.G. Sidorov, S.A. Dvoretsky, N. N. Mikhailov, S. V. Rykhlitski, E. V. Spesivtsev

Publikováno v: International Journal of Nanotechnology. 3:120

We demonstrate the growth of potential barriers, wells and periodic nanostructures on the basis of Hg1-xCdxTe by molecular beam epitaxy. In situ single wavelength ellipsometry is used for control of thickness and variation of Hg1-xCdxTe composition.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44338780767e5cca09104fe2cfd033ae
https://doi.org/10.1504/ijnt.2006.008725

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