Synthesis and investigation of new materials in MIS structures for the development of physical foundations of CMOS technologies of nanoelectronics

Autor: Sabina Spiga, A. V. Sogoyan, Andrei Zenkevich, Yu.A. Voronov, V. I. Chichkov, V. N. Nevolin, Yu. Yu. Lebedinskii, N. S. Barantsev, Yu. A. Matveev, M. Fanchulli

Publikováno v: Russian microelectronics 39 (2010): 165–174.
info:cnr-pdr/source/autori:Zenkevich, A. V.; Lebedinskii, Yu. Yu.; Matveev, Yu. A.; Barantsev, N. S.; Voronov, Yu. A.; Sogoyan, A. V.; Nevolin, V. N.; Chichkov, V. I.; Spiga, S.; Fanchulli, M./titolo:Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics/doi:/rivista:Russian microelectronics/anno:2010/pagina_da:165/pagina_a:174/intervallo_pagine:165–174/volume:39

Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory tec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af318220ace2cda61d0585cb5dac33f2
https://doi.org/10.1134/s1063739710030030

Reactive ion etching of silicon using low-power plasma etcher

Autor: Yu.A. Voronov, A D Bakun, Denis Veselov

Publikováno v: Journal of Physics: Conference Series. 748:012017

The paper is devoted to the study of deep reactive ion etching of silicon using diode plasma etcher system with a low-power source. Silicon wafers were etched in a sulfur hexafluoride plasma and sulfur hexafluoride/oxygen plasma. The maximum achieved

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::477510590b782ad552a65935578a74f2
https://doi.org/10.1088/1742-6596/748/1/012017

High-voltage safety fuses for the transition-radiation tracking detector in the ATLAS experiment

Autor: Yu.A. Voronov, A. B. Simakov, V. V. Sosnovtsev, E. Onishchenko, T. A. Sugrobova, S. I. Suchkov, S. A. Voronov

Publikováno v: Instruments and experimental techniques, 47(2), 191-193
Scopus-Elsevier

A safety fuse has been designed for the electrical protection of gas-filled detectors in the ATLAS experiment at CERN (Geneva, Switzerland). The fuse is a polished lithium niobate plate with a titanium strip of 91-kΩ resistance deposited by the phot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d78ac7702d628d72e3775700ba51851
https://research.rug.nl/en/publications/984948fe-7bbb-4236-bb7c-4b8ac3faf29d

Researching of Dielectric Membrane Films Obtained by Reactive Magnetron Sputtering

Autor: K.D. Vanyukhin, Yu.A. Voronov, D.S. Veselov

Publikováno v: Physics Procedia. :495-499

The aim of the paper is the research of dielectric membrane films obtained by reactive magnetron sputtering. Simulation of temperature distribution on the membrane structures of different elemental composition in the process of heating and cooling wa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::509e9656bcb59f7f0d0c71ebce7de6a5

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