Zobrazeno 1 - 10 of 208 pro vyhledávání: '"Yu.A. Nikolaev"'
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[The efficacy and safety study of Mexidol and Mexidol FORTE 250 in patients with chronic cerebral ischemia]
Autor: L.A. Shchepankevich, Yu.A. Nikolaev, E.V. Taneeva, M.A. Pervuninskaya, M.S. Shchepankevich
Publikováno v: Zhurnal nevrologii i psikhiatrii imeni S.S. Korsakova. 121(10)
To study the efficacy and safety of sequential MexidoL therapy, administered intravenously (500 mg once a day) for 14 days, followed by taking the oral form Mexidol FORTE 250 at a dose of 250 mg (1 tablet) 3 times a day for 60 days in elderly patient
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50a785b78ca2f9e52b11b0b397e247fe
https://pubmed.ncbi.nlm.nih.gov/34874652
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5
Akademický článek
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6
Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si:Er:O diodes
Autor: A. M. Emel’yanov, K.F. Shtel'makh, M. A. Trishenkov, Yu.A. Nikolaev, P. E. Khakuashev, Nikolai A. Sobolev
Publikováno v: Journal of Luminescence. 80:315-319
Electroluminescence (EL) characteristics of avalanching silicon diodes fabricated by Er and O co-implantation and subsequent annealing have been studied. Saturation of the Er-related EL intensity is achieved under the avalanche regime at current dens
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7fa4eee99f7818630f928ee9ff6955a5
https://doi.org/10.1016/s0022-2313(98)00118-5
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7
Holmium-related luminescence in crystalline silicon
Autor: Z. F. Krasilnik, Nikolai A. Sobolev, A. M. Emel’yanov, Yu.A. Nikolaev, Boris A. Andreev
Publikováno v: Materials Science and Engineering: B. 81:176-178
The influence of annealing temperature of Si:Ho:O structures prepared by solid phase epitaxial technique on the photoluminescence spectra at 4.2 K was studied. The ions of Ho at 1 MeV energy and 1 x 10 14 cm - 2 dose and O at 0.14 MeV and 1 x 10 15 c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::595bf2c8b07d934163aa895d1bfbd768
https://doi.org/10.1016/s0921-5107(00)00731-5
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8
Infrared photoluminescence from holmium ions in single-crystal silicon and holmium oxide
Autor: Yu.A. Nikolaev, Nikolai A. Sobolev, B. T. Melekh, A. N. Yakimenko, Yu N Filin, A. M. Emel’yanov
Publikováno v: Semiconductor Science and Technology. 15:511-513
Infrared photoluminescence (PL) has been studied in Ho-doped single-crystal silicon structures fabricated by solid-phase epitaxy and in crystalline holmium oxide in the temperature range from 4.2 to 300 K. PL arises from the internal 4f-shell transit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::436fd1226effd3e971c98ea6279dd9d6
https://doi.org/10.1088/0268-1242/15/6/304
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9
Akademický článek
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10
Light-Emitting Si:Er:O Diodes Operating In The Avalanche Regime
Autor: P. E. Khakuashev, Yu.A. Nikolaev, M. A. Trishenkov, A. M. Emel’yanov, S. V. Gastev, Nikolai A. Sobolev
Publikováno v: MRS Proceedings. 486
Electroluminescence (EL) characteristics of avalanching diodes fabricated by Er and O co-implantation and subsequent annealing have been studied. Distribution of Er3+-related EL at 1.538 μm was found to be uniform over the device area at 300 K. Satu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::520a7f3a369970f231403977440a4259
https://doi.org/10.1557/proc-486-139
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