Zobrazeno 1 - 10 of 32 pro vyhledávání: '"Yu.A. Kudriavtsev"'
1
Mg-Doped Hexagonal InN/Al2O3 Films Grown by MBE
Autor: V. Yu. Davydov, V. V. Ratnikov, V. A. Vekshin, V. V. Mamutin, Sergei Ivanov, Valentin V. Emtsev, Yu.A. Kudriavtsev, B. Ya. Ber
Publikováno v: ResearcherID
We report on the first attempts of Mg doping of hexagonal InN/Al2O3(0001) films grown by plasma-assisted molecular beam epitaxy. A dramatic improvement of crystalline quality of InN : Mg epilayers has been observed at the magnesium concentration in t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e213197c19ea2fa2bbc962d254046a1
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<373::aid-pssa373>3.0.co
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2
Incorporation of Mg in GaN grown by molecular beam epitaxy
Autor: C. T. Foxon, J.W. Orton, Tin S. Cheng, S. E. Hooper, Yu.A. Kudriavtsev, Sergei V. Novikov, B. Ya. Ber
Publikováno v: Journal of Crystal Growth. 197:7-11
We report Mg doping experiments in GaN grown by plasma-enhanced molecular beam epitaxy on sapphire and GaAs substrates. Secondary ion mass spectrometry was used to measure the Mg concentration as a function of Mg flux. Our data show a linear dependen
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae711c0151d3f1cc4b7d4d2f391b10a7
https://doi.org/10.1016/s0022-0248(98)00919-1
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3
MBE growth and characterization of magnesium-doped gallium nitride
Autor: S N Novikov, L.B Flannery, C. T. Foxon, J.W. Orton, Ian Harrison, A. V. Andrianov, D.E. Lacklison, Tin S. Cheng, B. Ya. Ber, Yu.A. Kudriavtsev, S. E. Hooper, D J Dewsnip
Publikováno v: Semiconductor Science and Technology. 13:927-935
We describe measurements of the electrical and luminescence properties of Mg-doped GaN films grown by plasma-enhanced molecular beam epitaxy on sapphire and GaAs substrates. Secondary ion mass spectroscopy measurements were used to determine the tota
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d1fe58fb4d39df2d5d63787365a51918
https://doi.org/10.1088/0268-1242/13/8/018
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6
Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy
Autor: Tin S. Cheng, J.W. Orton, Yu.A. Kudriavtsev, B. Ya. Ber, D.E. Lacklison, C. T. Foxon, A. V. Merkulov, Sergei V. Novikov
Publikováno v: Semiconductor Science and Technology. 13:71-74
The incorporation of magnesium and carbon in GaN grown by molecular beam epitaxy (MBE) has been investigated by secondary ion mass spectroscopy (SIMS) and other techniques. We have grown Mg:GaN in a wide range of chemical concentrations -. Low temper
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b44195db6d141f5da8d7fce692f10994
https://doi.org/10.1088/0268-1242/13/1/010
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7
Studies of p-GaN grown by MBE on GaAs(1 1 1)B
Autor: Ian Harrison, J.W. Orton, L.B Flannery, C. T. Foxon, J.D. Dewsnip, Sergei V. Novikov, B. Ya. Ber, N. J. Jeffs, Tin S. Cheng, Yu.A. Kudriavtsev
Publikováno v: Journal of Crystal Growth. :516-518
We have investigated the properties of Mg-doped GaN grown by molecular beam epitaxy. Active nitrogen is produced by an Oxford Applied Research CARS25 plasma source. Further details of the methods used to grow the films have been presented elsewhere [
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e62951faeb3ca342478d973daf8d6e65
https://doi.org/10.1016/s0022-0248(98)00342-x
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8
Radiation hard In/sub 0.53/Ga/sub 0.47/As solar cells with Zn diffused emitters
Autor: P. A. Blagnov, V. A. Solov’ev, David J. Brinker, Yu.A. Kudriavtsev, Carlos Vargas-Aburto, M. E. Boiko, R.M. Uribe, L.B. Karlina, V. V. Kozlovskii
Publikováno v: Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
This paper reports on the radiation resistance of In/sub 0.53/Ga/sub 0.47/As (InGaAs) cells with a p/n configuration. These solar cells can be used as bottom cells in high-efficiency tandems with wide gap top cells and as thermophotovoltaic converter
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::137738552161aaaf58a65d7ef8d8f900
https://doi.org/10.1109/pvsc.1997.654259
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9
Heterostructure for UV LEDs Based on Thick AlGaN Layers
Autor: W. V. Lundin, N.N. Ledentsov, Yu.A. Kudriavtsev, U.I. Ushakov, A.V. Lunev, Yu.M. Sherniakov, A. V. Sakharov, A. S. Usikov
Publikováno v: MRS Internet Journal of Nitride Semiconductor Research. 3
Thick AlGaN layers and GaN/AlGaN heterostructures were grown by low pressure MOCVD on (0001) sapphire substrates utilizing a low temperature AlGaN buffer layer. The distribution of Al in the thick AlGaN layers was observed to be non-uniform as a func
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f933f6c8b6c277cc4bbb2c22f5a7c85
https://doi.org/10.1557/s1092578300001009
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10
Direct SIMS Determination of the InxGa1-xN Mole Fraction
Autor: A. P. Kovarsky, D. N. Stroganov, Samuel Clagett Strite, Tilman A. Beierlein, M. A. Yagovkina, Yu. L. Kretser, Yu.A. Kudriavtsev
Publikováno v: MRS Internet Journal of Nitride Semiconductor Research. 3
We demonstrate that our secondary mass ion spectroscopy (SIMS) method for the determination of the mole fraction in solid InxGa1-xN solutions is accurate and reproduceable without need of reference samples. The method is based on measuring relative c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4ead549ef8a9d5c981df181eb5719d4
https://doi.org/10.1557/s109257830000082x
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